| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
$0.3868 / $1.0500
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| Vishay Intertechnologies |
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 |
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| International Rectifier |
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
$0.3600 / $1.7500
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| Intersil Corporation |
8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
$0.3600 / $1.7500
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| Harris Semiconductor |
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
$0.4900 / $1.7500
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| Vishay Siliconix |
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 |
$0.4900 / $1.5400
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| onsemi |
MISCELLANEOUS MOSFETS |
$0.4561
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| Honest Han |
MOSFET N-CH 100V 7.7A DPAK |
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| Rochester Electronics LLC |
8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| Samsung Semiconductor |
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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