Datasheets
IRFF110R1 by:

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

Part Details for IRFF110R1 by TT Electronics Resistors

Overview of IRFF110R1 by TT Electronics Resistors

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Applications Industrial Automation Motor control systems

Part Details for IRFF110R1

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IRFF110R1 Part Data Attributes

IRFF110R1 TT Electronics Resistors
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IRFF110R1 TT Electronics Resistors Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRFF110R1

This table gives cross-reference parts and alternative options found for IRFF110R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF110R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF110R1 vs 2N6782
IRFF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Fairchild Semiconductor Corporation IRFF110R1 vs IRFF110
JAN2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN Microsemi Corporation IRFF110R1 vs JAN2N6782
2N6782-JQR-B 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs 2N6782-JQR-B
2N6782.MODR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs 2N6782.MODR1
2N6782-QR-B Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors IRFF110R1 vs 2N6782-QR-B
2N6782-QRR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs 2N6782-QRR1
IRFF110 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF110R1 vs IRFF110
2N6782-QR-BR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs 2N6782-QR-BR1
IRLF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF110R1 vs IRLF110
Part Number Description Manufacturer Compare
2N6782-QR-B 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs 2N6782-QR-B
2N6782.MODR1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs 2N6782.MODR1
JANTX2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG IRFF110R1 vs JANTX2N6782
JANTX2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF110R1 vs JANTX2N6782
JANTX2N6782PBF Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier IRFF110R1 vs JANTX2N6782PBF
IRFF110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Fairchild Semiconductor Corporation IRFF110R1 vs IRFF110
2N6782-JQR-AR1 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors IRFF110R1 vs 2N6782-JQR-AR1
2N6782-QR Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN TT Electronics Resistors IRFF110R1 vs 2N6782-QR
IRFF110R1 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF110R1 vs IRFF110R1
JANTXV2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Semicoa Semiconductors IRFF110R1 vs JANTXV2N6782

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