Parametric results for: IRF630 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 15 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 14 FAST SWITCHING, AVALANCHE RATED 2 HIGH INPUT IMPEDANCE 1 LEADFORM OPTIONS ARE AVAILABLE 3

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40.0 mJ 1 60.0 mJ 1 94.0 mJ 22 100.0 mJ 1 150.0 mJ 3 160.0 mJ 7 162.0 mJ 4 170.0 mJ 1 250.0 mJ 53 350.0 mJ 2

Min (mJ) - Max (mJ)

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DRAIN 124 ISOLATED 4

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Configuration (3)

SINGLE 110 Single 1 SINGLE WITH BUILT-IN DIODE 65

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DS Breakdown Voltage-Min (2)

150 V 2 200 V 154

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

9 A 1

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Drain Current-Max (ID) (5)

6 A 1 8 A 3 9 A 139 9.3 A 27 10 A 2

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

300 mΩ 24 400 mΩ 122

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 176

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50 pF 3 150 pF 3

Min (pF) - Max (pF)

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TO-220 1 TO-220AB 107 TO-262AA 3 TO-263AB 18

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R-PSFM-T2 1 R-PSFM-T3 112 R-PSIP-T3 3 R-PSSO-G2 30

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e0 64 e3 46

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Manufacturer (37)

Advanced Microelectronic Products Inc 1 Advanced Power Electronics Corp 1 Comset Semiconductor 1 Diodes Incorporated 1 Fairchild Semiconductor Corporation 15 FCI Semiconductor 1 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 HSMC Corporation 2 Inchange Semiconductor Company Ltd 5 Infineon Technologies AG 7 International Rectifier 59 Intersil Corporation 2 Jiangsu Changjiang Electronics Technology Co Ltd 1 Micro Commercial Components 2 Micro Electronics Corporation 1 Micro Electronics Ltd 1 Microsemi Corporation 1 Motorola Mobility LLC 17 Motorola Semiconductor Products 17 National Semiconductor Corporation 2 New Jersey Semiconductor Products Inc 11 NXP Semiconductors 4 onsemi 1 Philips Semiconductors 2 Rochester Electronics LLC 3 Samsung Semiconductor 2 STMicroelectronics 6 Taitron Components Inc 1 Texas Instruments 1 Thomson Consumer Electronics 2 Transys Electronics Limited 5 Unitrode Corporation 1 Vishay Intertechnologies 6 Vishay Siliconix 5 Zetex / Diodes Inc 1

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1 24 3 1 NOT SPECIFIED 2

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Number of Elements (1)

1 176

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Number of Terminals (2)

2 31 3 115

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ENHANCEMENT MODE 176

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150.0 °C 93 175.0 °C 18

Min (°C) - Max (°C)

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-55.0 °C 5

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PLASTIC/EPOXY 146

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RECTANGULAR 146

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FLANGE MOUNT 113 IN-LINE 3 SMALL OUTLINE 30

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Active 24 Contact Manufacturer 18 Obsolete 82 Transferred 68

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No 26 Yes 35

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225 8 235 3 250 2 260 13 NOT SPECIFIED 10

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Polarity/Channel Type (1)

N-CHANNEL 176

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35 W 1 74 W 38 75 W 38 100 W 1

Min (W) - Max (W)

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25 W 1 30 W 1 35 W 1 38 W 1 70 W 1 72 W 5 74 W 8 75 W 28 82 W 18 88 W 2

Min (W) - Max (W)

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Surface Mount (2)

NO 134 YES 31

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