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Part Details for IRF630NPBF by Infineon Technologies AG
Overview of IRF630NPBF by Infineon Technologies AG
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF630NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7338
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Newark | N Channel Mosfet, 200V, 9.3A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF630NPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 348 |
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$0.5090 / $1.1000 | Buy Now |
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DISTI #
IRF630NPBF-ND
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DigiKey | MOSFET N-CH 200V 9.3A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
7701 In Stock |
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$0.4237 / $1.1300 | Buy Now |
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DISTI #
IRF630NPBF
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Avnet Americas | Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF630NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 400 |
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$0.3947 / $0.4792 | Buy Now |
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DISTI #
63J7338
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Avnet Americas | Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7338) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 348 Partner Stock |
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$0.5840 / $1.2000 | Buy Now |
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DISTI #
942-IRF630NPBF
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Mouser Electronics | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS: Compliant | 1064 |
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$0.4230 / $0.9700 | Buy Now |
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DISTI #
E02:0323_00010818
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2418 | Europe - 131894 |
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$0.3588 / $0.6408 | Buy Now |
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DISTI #
V36:1790_13890561
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2208 | Americas - 9713 |
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$0.3854 / $0.6564 | Buy Now |
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DISTI #
V79:2366_26427791
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2141 | Americas - 2263 |
|
$0.2529 / $0.2955 | Buy Now |
|
DISTI #
V99:2348_13890561
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2208 | Americas - 2017 |
|
$0.3615 / $0.4039 | Buy Now |
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|
Future Electronics | Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Tube | 40Tube |
|
$0.3850 / $0.4750 | Buy Now |
Part Details for IRF630NPBF
IRF630NPBF CAD Models
IRF630NPBF Part Data Attributes
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IRF630NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF630NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 94 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 82 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF630NPBF
This table gives cross-reference parts and alternative options found for IRF630NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF630N | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF630NPBF vs IRF630N |
| IRF630N | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF630NPBF vs IRF630N |