Parametric results for: IRF520A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

113.0 mJ 4

12 hits Apply

DRAIN 8

12 hits Apply

Configuration (2)

SINGLE 8 SINGLE WITH BUILT-IN DIODE 4

12 hits Apply

DS Breakdown Voltage-Min (1)

100 V 12

12 hits Apply

Drain Current-Max (ID) (2)

9 A 8 9.2 A 4

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (2)

200 mΩ 4 270 mΩ 8

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

TO-220AB 11

12 hits Apply

R-PSFM-T3 12

12 hits Apply

e3 2

12 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 2 Motorola Mobility LLC 4 Motorola Semiconductor Products 4 Rochester Electronics LLC 1 Samsung Semiconductor 1

12 hits Apply

NOT APPLICABLE 1

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

175.0 °C 3

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

12 hits Apply

FLANGE MOUNT 12

12 hits Apply

Active 1 Obsolete 10 Transferred 1

12 hits Apply

No 1

12 hits Apply

NOT APPLICABLE 1

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

40 W 8

12 hits Apply

45 W 2

12 hits Apply

Surface Mount (1)

NO 12

12 hits Apply