Datasheets
IRF520AJ by:

9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRF520AJ by Motorola Mobility LLC

Overview of IRF520AJ by Motorola Mobility LLC

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Part Details for IRF520AJ

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IRF520AJ Part Data Attributes

IRF520AJ Motorola Mobility LLC
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IRF520AJ Motorola Mobility LLC 9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRF520AJ

This table gives cross-reference parts and alternative options found for IRF520AJ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF520AJ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF520D1 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520AJ vs IRF520D1
IRF520U Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF520AJ vs IRF520U
IRF520AJ Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF520AJ vs IRF520AJ
IRF520WC 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520AJ vs IRF520WC
IRF520UA Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF520AJ vs IRF520UA
IRF520AF 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520AJ vs IRF520AF
IRF520C Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF520AJ vs IRF520C
IRF52016 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520AJ vs IRF52016
IRF520U 9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520AJ vs IRF520U
IRF52016 Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF520AJ vs IRF52016

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