Parametric results for: GT60M303(Q) under IGBTs

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

COLLECTOR 1

1 hit Apply

Collector Current-Max (IC) (1)

60 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

900 V 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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400 ns 1

1 hit Apply

25 V 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

170 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply