Parametric results for: FLK102 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 4

4 hits Apply

SOURCE 2

4 hits Apply

Configuration (1)

SINGLE 2

4 hits Apply

DS Breakdown Voltage-Min (2)

10 V 2 15 V 2

Min (V) - Max (V)

4 hits Apply

Drain Current-Max (ID) (1)

400 mA 2

4 hits Apply

HIGH ELECTRON MOBILITY 2 JUNCTION 2

4 hits Apply

Highest Frequency Band (1)

KU BAND 4

4 hits Apply

R-MDFM-F2 2 R-XUUC-N8 2

4 hits Apply

Manufacturer (2)

FUJITSU Limited 2 FUJITSU Semiconductor Limited 2

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (2)

2 2 8 2

4 hits Apply

DEPLETION MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

METAL 2 UNSPECIFIED 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 2 UNCASED CHIP 2

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

7.5 W 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply