Parametric results for: BAS29 under Rectifier Diodes

All Filters Application Breakdown Voltage-Min Configuration Diode Element Material Diode Type Forward Voltage-Max (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Output Current-Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Reverse Recovery Time-Max Surface Mount Technology

GENERAL PURPOSE 2

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Breakdown Voltage-Min (1)

120 V 1

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Configuration (2)

COMPLEX 1 SINGLE 32

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Diode Element Material (1)

SILICON 31

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Diode Type (1)

RECTIFIER DIODE 39

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Forward Voltage-Max (VF) (4)

750 mV 3 840 mV 9 900 mV 3 1.25 V 5

Min (V) - Max (V)

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TO-236AB 13

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R-PDSO-G3 31

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e0 4 e3 18

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Manufacturer (20)

Continental Device India Ltd 2 Diodes Incorporated 1 Diotec Semiconductor AG 1 Fairchild Semiconductor Corporation 4 JGD Semiconductors Co Ltd 1 Jinan Gude Electronic Device Co Ltd 1 Minireel Components 1 National Semiconductor Corporation 1 Nexperia 5 North American Philips Discrete Products Div 1 NXP Semiconductors 7 onsemi 1 Philips Semiconductors 2 RFE International Inc 1 Rochester Electronics LLC 1 Surge Components Inc 1 Texas Instruments 4 Transys Electronics Limited 1 Unisonic Technologies Co Ltd 2 YAGEO Corporation 3

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Number of Elements (2)

1 32 4 1

Min - Max

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Output Current-Max (3)

200 mA 7 250 mA 20 430 mA 1

Min (A) - Max (A)

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Power Dissipation-Max (3)

250 mW 12 300 mW 1 350 mW 7

Min (W) - Max (W)

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Rep Pk Reverse Voltage-Max (4)

90 V 7 100 V 1 110 V 12 120 V 12

Min (V) - Max (V)

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Reverse Current-Max (1)

100 nA 6

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Reverse Recovery Time-Max (3)

6 ns 1 50 ns 34 75 ns 1

Min (µs) - Max (µs)

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Surface Mount (1)

YES 36

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Technology (1)

AVALANCHE 12

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