Parametric results for: BAR64. under PIN Diodes
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BAR6403WE6327HTSA1
Infineon Technologies AG
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$0.0601 | Yes | Not Recommended | 0.35 pF | 2.8 Ω | SILICON | 150 V | PIN DIODE | SINGLE | 1 | POSITIVE-INTRINSIC-NEGATIVE | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||
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BAR6402VH6327XTSA1
Infineon Technologies AG
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$0.0693 | Yes | Not Recommended | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SINGLE | 1 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||||||||||||||||||
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BAR6404E6327HTSA1
Infineon Technologies AG
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$0.1301 | Yes | Not Recommended | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||
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BAR6402ELE6327XTMA1
Infineon Technologies AG
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$0.1433 | Yes | Active | 0.35 pF | 0.13 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 1 mA | 100 MHz | 1.55 µs | e4 | 1 | 125 °C | Gold (Au) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||
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BAR64-05W-E3-18
Vishay Intertechnologies
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$0.1509 | Yes | Active | 0.5 pF | 0.5 pF | SILICON | 100 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | HIGH FREQUENCY TO S BAND | 1.4 µs | R-PDSO-G3 | 125 °C | -55 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | unknown | Vishay | SOT-323, 3 PIN | |||||||||||||||||
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BAR6406E6327HTSA1
Infineon Technologies AG
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$0.1575 | Yes | Not Recommended | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||||||||||||||||||
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BAR6405WH6327XTSA1
Infineon Technologies AG
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$0.1766 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||||||||||||||||||
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BAR6406WH6327XTSA1
Infineon Technologies AG
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$0.2258 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||||||||||||||||||
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BAR6405WE6327HTSA1
Infineon Technologies AG
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Check for Price | Yes | Obsolete | 0.35 pF | 250 mW | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | MEDIUM FREQUENCY TO C BAND | 1.55 µs | R-PDSO-G3 | AEC-Q101 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | R-PDSO-G3 | 8541.10.00.80 | ||||||||||||
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BAR64-06E6433
Infineon Technologies AG
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Check for Price | Yes | Active | 0.35 pF | 0.17 pF | 250 mW | 20 Ω | SILICON | 200 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 1 mA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | R-PDSO-G3 | 8541.10.00.80 | SOT-23 | 3 |