Parametric results for: 30N03 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 13 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 14 ESD PROTECTED 4 LOGIC LEVEL COMPATIBLE 33 LOGIC LEVEL COMPATIBLE, FAST SWITCHING 3 ULTRA LOW RESISTANCE 2

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9.0 mJ 4 16.0 mJ 2 28.0 mJ 2 70.0 mJ 6 72.0 mJ 1 75.0 mJ 6 90.0 mJ 6 112.0 mJ 2 145.0 mJ 6 150.0 mJ 6 250.0 mJ 24 500.0 mJ 11

Min (mJ) - Max (mJ)

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DRAIN 65 ISOLATED 16

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Configuration (2)

SINGLE 56 SINGLE WITH BUILT-IN DIODE 78

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DS Breakdown Voltage-Min (2)

30 V 82 100 V 40

Min (V) - Max (V)

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Drain Current-Max (ID) (9)

9 A 2 11 A 16 13 A 15 15 A 16 21 A 3 23 A 3 28 A 2 30 A 60 75 A 17

Min (A) - Max (A)

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Drain-source On Resistance-Max (27)

3.8 mΩ 3 4.7 mΩ 3 6 mΩ 11 8.2 mΩ 1 9 mΩ 2 9.8 mΩ 6 10 mΩ 1 11 mΩ 1 11.1 mΩ 3 11.7 mΩ 1 13 mΩ 6 13.6 mΩ 2 14 mΩ 1 14.6 mΩ 5 15 mΩ 6 17.7 mΩ 1 18 mΩ 4 23 mΩ 4 26 mΩ 2 28 mΩ 4 30 mΩ 6 31 mΩ 6 45 mΩ 3 100 mΩ 16 110 mΩ 16 200 mΩ 8 14.6 Ω 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 134

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100 pF 1 164 pF 1 283 pF 1 320 pF 1

Min (pF) - Max (pF)

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TO-220AB 45 TO-251 3 TO-252 29 TO-252AA 4

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R-PDSO-F8 8 R-PDSO-G8 4 R-PSFM-T3 47 R-PSIP-T3 7 R-PSSO-G2 49 S-PDSO-N8 6

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e0 28 e2 3 e3 57

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Manufacturer (16)

Diotec Semiconductor AG 1 Infineon Technologies AG 63 International Rectifier 20 Micro Commercial Components 4 NXP Semiconductors 11 Philips Semiconductors 6 Rochester Electronics LLC 1 ROHM Semiconductor 7 SamHop Microelectronics Corp. 2 Secos Corporation 2 Siemens 8 Temic Semiconductors 3 Unisonic Technologies Co Ltd 8 Vishay Intertechnologies 1 Vishay Siliconix 1 Yangzhou Yangjie Electronics Co Ltd 2

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1 32 3 4

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Number of Elements (1)

1 134

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Number of Terminals (3)

2 49 3 54 8 18

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ENHANCEMENT MODE 133

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150.0 °C 17 175.0 °C 45

Min (°C) - Max (°C)

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-55.0 °C 5

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PLASTIC/EPOXY 121

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RECTANGULAR 115 SQUARE 6

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FLANGE MOUNT 47 IN-LINE 7 SMALL OUTLINE 67

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Active 32 Contact Manufacturer 4 Not Recommended 1 Obsolete 77 Transferred 26

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No 12 Yes 28

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260 23 NOT SPECIFIED 15

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Polarity/Channel Type (2)

N-CHANNEL 126 P-CHANNEL 8

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60 W 4

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2 W 4 2.8 W 1 3 W 1 21 W 2 25 W 3 31 W 1 40 W 1 42 W 6 50 W 4 60 W 3 69 W 2 75 W 4 82 W 2 100 W 2 120 W 4 125 W 4 136 W 2 187 W 6 188 W 5

Min (W) - Max (W)

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Surface Mount (2)

NO 58 YES 76

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