Part Details for IPD30N03S4L14ATMA1 by Infineon Technologies AG
Overview of IPD30N03S4L14ATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD30N03S4L14ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
50Y2031
|
Newark | Mosfet Transistor, N Channel, 30 A, 30 V, 0.0112 Ohm, 10 V, 1.5 V Rohs Compliant: Yes |Infineon IPD30N03S4L14ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 39955 |
|
$0.4070 / $0.9570 | Buy Now |
DISTI #
IPD30N03S4L14ATMA1CT-ND
|
DigiKey | MOSFET N-CH 30V 30A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
18935 In Stock |
|
$0.3030 / $0.9200 | Buy Now |
DISTI #
IPD30N03S4L14ATMA1
|
Avnet Americas | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S4L14ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3757 | Buy Now |
|
Future Electronics | IPD30N03S4L14 Series 30 V 30 A 13.6 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 25000Reel |
|
$0.3700 / $0.3950 | Buy Now |
|
Ameya Holding Limited | MOSFET N-CH 30V 30A TO252-3 | 803 |
|
RFQ | |
DISTI #
SP000275919
|
EBV Elektronik | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000275919) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | EBV - 132500 |
|
Buy Now | |
|
LCSC | 30V 30A 13.6m30A10V 31W 2.2V10uA 1PCSNChannel TO-252 MOSFETs ROHS | 20 |
|
$0.5093 / $0.5634 | Buy Now |
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 92500 |
|
$0.4625 / $0.4970 | Buy Now |
|
Win Source Electronics | MOSFET N-CH 30V 30A TO252-3 | 25000 |
|
$0.4340 / $0.6500 | Buy Now |
Part Details for IPD30N03S4L14ATMA1
IPD30N03S4L14ATMA1 CAD Models
IPD30N03S4L14ATMA1 Part Data Attributes:
|
IPD30N03S4L14ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD30N03S4L14ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 16 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0136 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |