Parametric results for: VN1106N under Small Signal Field-Effect Transistors

Filter Your Search

1 - 10 of 52,389 results

|
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Select parts from the table below to compare.
Compare
Compare
2N7002
Yangzhou Yangjie Electronics Co Ltd
$0.0133 Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 340 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99
NX7002BKMYL
Nexperia
$0.0146 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 350 mA 3.2 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PBCC-N3 e3 IEC-60134 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR CHIP CARRIER TIN NO LEAD BOTTOM NEXPERIA compliant EAR99 DFN SC-101, DFN1006-3, 3 PIN 3 SOT883 Nexperia
2N7002A
Yangzhou Yangjie Electronics Co Ltd
$0.0147 Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 340 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99
NX7002BKMBYL
Nexperia
$0.0150 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 350 mA 3.2 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PBCC-N3 e3 IEC-60134 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR CHIP CARRIER TIN NO LEAD BOTTOM NEXPERIA compliant EAR99 DFN DFN1006B-3, 3 PIN 3 SOT883B Nexperia
2N7002W
Yangzhou Yangjie Electronics Co Ltd
$0.0151 Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 340 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99
BSS123
Yangzhou Yangjie Electronics Co Ltd
$0.0158 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW 350 mW SWITCHING SILICON R-PDSO-G3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99
NX2301P,215
Nexperia
$0.0161 Yes Not Recommended P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 190 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 AEC-Q101 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA compliant EAR99 TO-236 PLASTIC PACKAGE-3 3 SOT23 Nexperia
2N7002W
Diotec Semiconductor AG
$0.0164 Yes Active e3 1 260 10 Matte Tin (Sn) - annealed DIOTEC SEMICONDUCTOR AG compliant EAR99 Diotec 2020-01-08
2N7002
Diotec Semiconductor AG
$0.0190 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 280 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 1 150 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIOTEC SEMICONDUCTOR AG compliant EAR99 Diotec 2019-07-12
PMZ350UPEYL
Nexperia
$0.0197 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 1 A 450 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PBCC-N3 e3 IEC-60134 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR CHIP CARRIER TIN NO LEAD BOTTOM NEXPERIA compliant EAR99 DFN DFN1006-3, 3 PIN 3 SOT883 Nexperia