Parametric results for: VN1106N under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 6

10 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 8

10 hits Apply

DS Breakdown Voltage-Min (1)

60 V 8

10 hits Apply

Drain Current-Max (ID) (3)

2.5 A 5 7 A 1 9 A 2

Min (A) - Max (A)

10 hits Apply

Drain-source On Resistance-Max (1)

700 mΩ 8

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

10 hits Apply

25 pF 7

10 hits Apply

TO-220AB 1 TO-39 5

10 hits Apply

O-MBCY-W3 5 R-PSFM-T3 1 S-XUUC-N2 2

10 hits Apply

e0 6

10 hits Apply

Manufacturer (2)

Microchip Technology Inc 3 Supertex Inc 7

10 hits Apply

Number of Elements (1)

1 10

10 hits Apply

Number of Terminals (2)

2 2 3 6

10 hits Apply

ENHANCEMENT MODE 10

10 hits Apply

150.0 °C 10

10 hits Apply

METAL 5 PLASTIC/EPOXY 1 UNSPECIFIED 2

10 hits Apply

RECTANGULAR 1 ROUND 5 SQUARE 2

10 hits Apply

CYLINDRICAL 5 FLANGE MOUNT 1 UNCASED CHIP 2

10 hits Apply

Active 3 Obsolete 6 Transferred 1

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

10 hits Apply

6 W 5

10 hits Apply

6 W 1 45 W 1 75 W 2

Min (W) - Max (W)

10 hits Apply

Surface Mount (2)

NO 8 YES 2

10 hits Apply