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23K640-I/ST
Microchip Technology Inc
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$0.8554 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip Technology SRAM, 23K640-I/ST- 64kbit | Microchip | 2023-03-07 16:10:32 | 33 | 12 | 396 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 93 | YES | 7440-02-0, 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more | |||
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23K640T-I/SN
Microchip Technology Inc
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$0.8760 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | 8 | compliant | EAR99 | 8542.32.00.41 | Microchip | 2023-03-21 13:36:11 | 78 | 12 | 936 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 90 | YES | 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more | ||||
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23A640T-I/SN
Microchip Technology Inc
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$0.8760 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 1.8 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 1 µA | 1.5 V | 10 µA | 1.95 V | 1.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | 8 | compliant | EAR99 | 8542.32.00.41 | Microchip | 2019-12-08 03:13:44 | 78 | 12 | 936 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 90 | YES | 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more | ||||
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23A640-I/P
Microchip Technology Inc
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$0.9069 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 1.8 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 1 µA | 1.5 V | 10 µA | 1.95 V | 1.5 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP | 0.300 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DIP-8 | 8 | compliant | EAR99 | 8542.32.00.41 | Microchip 23A640-I/P SRAM Memory, 64kbit, 1.5 → 1.95 V, 32ns 8-Pin PDIP | Microchip | 2019-02-26 04:43:07 | 486.7 | 12 | 5840.4 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 80 | YES | 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | |||||||
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IS61WV25616BLL-10TLI-TR
Integrated Silicon Solution Inc
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$0.9099 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 9 mA | 2 V | 45 µA | 3.6 V | 2.4 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | 3A991.B.2.A | 8542.32.00.41 | Integrated Silicon Solution Inc. | 2022-05-24 08:36:41 | 12 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2023-06-14 | e | DRC Conflict Free | CMRT V6.01 | [object Object],[object Object],[object Object],[object Object] | [object Object],[object Object],[object ... more | |||||||||||||||
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IS62LV256AL-45TLI
Integrated Silicon Solution Inc
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$0.9148 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 12 µA | 3.63 V | 2.97 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TSOP | TSOP1, TSSOP28,.53,22 | 28 | compliant | EAR99 | 8542.32.00.41 | Integrated Silicon Solution Inc. | 2023-12-01 18:04:49 | 12 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2023-06-14 | e | DRC Conflict Free | CMRT V6.01 | [object Object],[object Object],[object Object],[object Object] | [object Object],[object Object],[object ... more | |||||||||||||
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23A640T-I/ST
Microchip Technology Inc
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$0.9425 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 1.8 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 1 µA | 1.5 V | 10 µA | 1.95 V | 1.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | 2019-04-16 09:19:47 | 33 | 12 | 396 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 93 | YES | 7440-02-0, 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more | ||||
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23A640-I/ST
Microchip Technology Inc
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$0.9425 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 1.8 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 1 µA | 1.5 V | 10 µA | 1.95 V | 1.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | 2019-04-16 09:19:47 | 33 | 12 | 396 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 93 | YES | 7440-02-0, 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more | ||||
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23K640T-I/ST
Microchip Technology Inc
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$0.9575 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | 2023-03-21 13:36:11 | 33 | 12 | 396 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2024-01-23 | 93 | YES | 7440-02-0, 1333-86-4 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more | ||||
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IS61LV256AL-10JLI
Integrated Silicon Solution Inc
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$0.9783 | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 50 µA | 2 V | 25 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.76 mm | 18.12 mm | 7.58 mm | INTEGRATED SILICON SOLUTION INC | SOJ | SOJ, SOJ28,.34 | 28 | compliant | EAR99 | 8542.32.00.41 | SRAM 256K 32Kx8 10ns Async SRAM 3.3v | Integrated Silicon Solution Inc. | 2023-03-07 16:10:32 | 12 | Industrial: -40C to +85C | RoHS 2 (2015/863/EU) | 2023-06-14 | e | DRC Conflict Free | CMRT V6.01 | [object Object],[object Object],[object Object],[object Object] | [object Object] | [object Object],[object Object],[object ... more |