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1 - 10 of 39,010 results
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5962H9689105VXA
Cobham Advanced Electronic Solutions
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Check for Price | No | Obsolete | 256 bit | 16 | 16X16 | 5 V | 45 ns | OTP ROM | 1 | 16 | 32.768 k | SYNCHRONOUS | SERIAL | 1.5 mA | 10 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-XDFP-F28 | Not Qualified | e0 | 125 °C | -55 °C | 38535V;38534K;883S | 1M Rad(Si) V | 28 | CERAMIC | DFP | FL28,.5 | RECTANGULAR | FLATPACK | YES | Tin/Lead (Sn/Pb) - hot dipped | FLAT | 1.27 mm | DUAL | AEROFLEX MICROELECTRONIC SOLUTIONS | DFP, FL28,.5 | unknown | 3A001.A.1.A | 8542.32.00.71 | ||||||||||||||||
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ER59256/P
Microchip Technology Inc
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Check for Price | No | No | Obsolete | 256 bit | 16 | 16X16 | 5 V | OTP ROM | 10 | 10000 Write/Erase Cycles | 1 | 16 | 16 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 3 mA | 10 µA | 5.5 V | 4.5 V | NMOS | COMMERCIAL | SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 9.8425 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | 0.300 INCH, PLASTIC, DIP-8 | unknown | EAR99 | 8542.32.00.71 | DIP | 8 | |||||||||
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ER59256-I/P
Microchip Technology Inc
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Check for Price | No | No | Obsolete | 256 bit | 16 | 16X16 | 5 V | OTP ROM | 10 | 10000 Write/Erase Cycles | 1 | 16 | 16 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 3 mA | 10 µA | 5.5 V | 4.5 V | NMOS | INDUSTRIAL | SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.064 mm | 10.033 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | 0.300 INCH, PLASTIC, DIP-8 | unknown | EAR99 | 8542.32.00.71 | DIP | 8 | ||||||||
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ER59256/P
Rochester Electronics LLC
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Check for Price | No | No | Active | 256 bit | 16 | 16X16 | 5 V | OTP ROM | 1 | 16 | 16 words | SYNCHRONOUS | SERIAL | 5.5 V | 4.5 V | NMOS | COMMERCIAL | R-PDIP-T8 | COMMERCIAL | e0 | NOT SPECIFIED | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 9.8425 mm | 7.62 mm | ROCHESTER ELECTRONICS INC | DIP, | unknown | DIP | 8 | ||||||||||||||||
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5962-01-077-0392
Intersil Corporation
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Check for Price | No | Obsolete | 8 | 32X8 | 5 V | 60 ns | OTP ROM | 32 | 32 words | 130 µA | TTL | MILITARY | R-XDFP-F16 | Not Qualified | 125 °C | -55 °C | 16 | CERAMIC | DFP | FL16,.3 | RECTANGULAR | FLATPACK | YES | FLAT | 1.27 mm | DUAL | INTERSIL CORP | not_compliant | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||||||||
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N82S23N
Signetics
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Check for Price | No | Obsolete | 256 bit | 8 | 32X8 | 5 V | 50 ns | OTP ROM | 1 | 32 | 32 words | ASYNCHRONOUS | OPEN-COLLECTOR | PARALLEL | 96 µA | 5.25 V | 4.75 V | BIPOLAR | COMMERCIAL EXTENDED | R-PDIP-T16 | Not Qualified | e0 | 75 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | SIGNETICS CORP | DIP-16 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||||
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5962-8670302EA
Lansdale Semiconductor Inc
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Check for Price | No | Active | 256 bit | 8 | 32X8 | 5 V | 35 ns | OTP ROM | 1 | 32 | 32 words | ASYNCHRONOUS | PARALLEL | 115 µA | 5.5 V | 4.5 V | BIPOLAR | MILITARY | R-GDIP-T16 | Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 16 | CERAMIC, GLASS-SEALED | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | LANSDALE SEMICONDUCTOR INC | DIP, DIP16,.3 | compliant | EAR99 | 8542.32.00.71 | DIP | 16 | ||||||||||||||||
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5962-01-077-0394
Intersil Corporation
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Check for Price | No | Obsolete | 8 | 32X8 | 5 V | 60 ns | OTP ROM | 32 | 32 words | 130 µA | TTL | MILITARY | R-XDFP-F16 | Not Qualified | 125 °C | -55 °C | 16 | CERAMIC | DFP | FL16,.3 | RECTANGULAR | FLATPACK | YES | FLAT | 1.27 mm | DUAL | INTERSIL CORP | not_compliant | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||||||||
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53S241AL
Monolithic Memories (RETIRED)
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Check for Price | No | Obsolete | 256 bit | 8 | 32X8 | 5 V | 50 ns | OTP ROM | 1 | 32 | 512 words | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | S-MQCC-N20 | Not Qualified | e0 | 125 °C | -55 °C | 20 | METAL | QCCN | LCC20,.35SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | MONOLITHIC MEMORIES | unknown | |||||||||||||||||||||||
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93Z667DMQB45
National Semiconductor Corporation
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Check for Price | No | Obsolete | 256 bit | 8 | 32X8 | 5 V | 80 ns | OTP ROM | 1 | 32 | 8.192 k | ASYNCHRONOUS | PARALLEL | 180 µA | 5.5 V | 4.5 V | TTL | MILITARY | R-XDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 24 | CERAMIC | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | NATIONAL SEMICONDUCTOR CORP | compliant | EAR99 | 8542.32.00.71 |