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31 - 40 of 266,030 results
Select Parts | Part Number |
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S27KS0642GABHI030
Infineon Technologies AG
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AS4C8M16SA-6TCNTR
Alliance Memory Inc
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IS42S16100H-6BLI
Integrated Silicon Solution Inc
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IS42S16100H-7TL
Integrated Silicon Solution Inc
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IS42S16100H-6TLI
Integrated Silicon Solution Inc
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AS4C1M16S-7TCN
Alliance Memory Inc
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AS4C4M16SA-7TCN
Alliance Memory Inc
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AS4C1M16S-6TIN
Alliance Memory Inc
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IS32FL3237-TQLA3-TR
Integrated Silicon Solution Inc
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AS4C4M16SA-6TCN
Alliance Memory Inc
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Access Time-Max
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Clock Frequency-Max (fCLK) |
Refresh Cycles
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Access Mode
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Memory IC Type
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Additional Feature
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I/O Type
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Interleaved Burst Length
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Number of Functions | Number of Ports | Number of Words Code | Number of Words |
Operating Mode
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Output Characteristics
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Self Refresh
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Sequential Burst Length
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Standby Current-Max
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Standby Voltage-Min
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Package Description
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Reach Compliance Code
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ECCN Code
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HTS Code
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Samacsys Manufacturer
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Part Package Code
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Pin Count
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Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 1.8 V | 35 ns | 200 MHz | HYPERRAM | SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 250 µA | 25 µA | 2 V | 1.7 V | CMOS | R-PBGA-B24 | 3 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-24 | compliant | EAR99 | 8542.32.00.02 | Infineon | ||||||||||||||
Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 3 V | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | ||||||
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G50 | Not Qualified | 70 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 85 °C | -40 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||
Yes | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.4 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G50 | 3 | 70 °C | 50 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOPII-50 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | TSOP2 | 50 | |||||||||||||||
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | |||||||||||||||||
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.4 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | 3 | 85 °C | -40 °C | 50 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOPII-50 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | |||||||||||||||||
Transferred | DDR DRAM | INTEGRATED SILICON SOLUTION INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory |
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S27KS0642GABHI030
Infineon Technologies AG
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$1.3419 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 1.8 V | 35 ns | 200 MHz | HYPERRAM | SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 250 µA | 25 µA | 2 V | 1.7 V | CMOS | R-PBGA-B24 | 3 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-24 | compliant | EAR99 | 8542.32.00.02 | Infineon | |||||||||||||||
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AS4C8M16SA-6TCNTR
Alliance Memory Inc
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$1.3457 | Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 3 V | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | |||||||
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IS42S16100H-6BLI
Integrated Silicon Solution Inc
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$1.3891 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||
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IS42S16100H-7TL
Integrated Silicon Solution Inc
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$1.3941 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G50 | Not Qualified | 70 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||
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IS42S16100H-6TLI
Integrated Silicon Solution Inc
|
$1.4131 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 85 °C | -40 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||
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AS4C1M16S-7TCN
Alliance Memory Inc
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$1.5392 | Yes | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.4 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G50 | 3 | 70 °C | 50 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOPII-50 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | TSOP2 | 50 | ||||||||||||||||
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AS4C4M16SA-7TCN
Alliance Memory Inc
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$1.6253 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | ||||||||||||||||||
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AS4C1M16S-6TIN
Alliance Memory Inc
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$1.6402 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.4 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | 3 | 85 °C | -40 °C | 50 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOPII-50 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | ||||||||||||||||||
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IS32FL3237-TQLA3-TR
Integrated Silicon Solution Inc
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$1.6550 | Transferred | DDR DRAM | INTEGRATED SILICON SOLUTION INC | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C4M16SA-6TCN
Alliance Memory Inc
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$1.7155 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory |