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BAP51-03,115
NXP Semiconductors
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$0.1533 | Yes | Obsolete | 0.55 pF | 0.55 pF | 500 mW | 2.5 Ω | SILICON | 60 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 550 ns | 1 V | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | PLASTIC, SMD, SC-76, 2 PIN | 2 | SOD323 | compliant | EAR99 | 8541.10.00 | NXP | ||||||
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RN242CST2RA
ROHM Semiconductor
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$0.1537 | Yes | Not Recommended | 0.35 pF | 0.35 pF | 3 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 3 mA | 100 MHz | 1 V | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ROHM CO LTD | compliant | EAR99 | ROHM Semiconductor | |||||||||||||||||||||||||
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BAP65-02,115
NXP Semiconductors
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$0.1537 | Yes | Obsolete | 0.9 pF | 0.65 pF | 715 mW | 900 mΩ | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 5 mA | 100 MHz | 170 ns | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | ULTRA SMALL, PLASTIC, SC-79, 2 PIN | 2 | SOD523 | compliant | EAR99 | 8541.10.00 | NXP | |||||
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BAR6404WH6327XTSA1
Infineon Technologies AG
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$0.1581 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||||||||||||||||||
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RN739DT146
ROHM Semiconductor
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$0.1593 | Obsolete | 0.4 pF | 200 mW | 7 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 50 V | Not Qualified | R-PDSO-G3 | 125 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | ROHM CO LTD | R-PDSO-G3 | unknown | EAR99 | 8541.10.00.80 | ROHM Semiconductor | ||||||||||||||||||
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RN142ZST2R
ROHM Semiconductor
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$0.1598 | Yes | Yes | Obsolete | 0.45 pF | 0.45 pF | 1.5 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 1 V | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | Matte Tin (Sn) | ROHM CO LTD | compliant | EAR99 | ROHM Semiconductor | |||||||||||||||||||||||
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BAP64LX,315
NXP Semiconductors
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$0.1606 | Yes | Obsolete | 0.3 pF | 0.3 pF | 150 mW | 1.5 Ω | SILICON | 60 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1000 ns | 20 V | Not Qualified | R-PDSO-N2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | NXP SEMICONDUCTORS | DFN | 1 X 0.60 MM, 0.40 MM HEIGHT, PLASTIC, SOD-882T, 2 PIN | 2 | SOD882D | compliant | EAR99 | 8541.10.00 | NXP | ||||
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JDP2S02AFS(TPL3)
Toshiba America Electronic Components
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$0.1616 | Yes | Obsolete | 0.4 pF | 0.3 pF | 1.5 Ω | 30 V | PIN DIODE | SINGLE | YES | 1 | 10 mA | 100 MHz | 1 V | 150 °C | TOSHIBA CORP | unknown | EAR99 | ||||||||||||||||||||||||||||||
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RN779FT106
ROHM Semiconductor
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$0.1619 | Yes | Active | 0.9 pF | 0.9 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 10 mA | 100 MHz | 35 V | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ROHM CO LTD | compliant | EAR99 | ROHM Semiconductor | |||||||||||||||||||||||||
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BAR6405WH6327XTSA1
Infineon Technologies AG
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$0.1655 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon |