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HSK110
Hitachi Ltd
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Check for Price | Obsolete | 100 mA | 1 V | 1.2 pF | SILICON | MIXER DIODE | SINGLE | YES | 35 V | 1 | PLANAR DOPED BARRIER | HIGH RELIABILITY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | Not Qualified | O-LELF-R2 | 60 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | HITACHI LTD | O-LELF-R2 | 2 | unknown | EAR99 | 8541.10.00.60 | ||||||||||||||||||
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DB3X313F0L
ROHM Semiconductor
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Check for Price | Yes | Obsolete | 200 mA | 550 mV | SILICON | MIXER DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 30 V | 2 | PLANAR DOPED BARRIER | ULTRA HIGH FREQUENCY | 1 A | R-PDSO-G3 | TO-236AA | 1 | 85 °C | -40 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | ROHM CO LTD | R-PDSO-G3 | compliant | EAR99 | 8541.10.00.60 | ||||||||||||||||||
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BA982-GS18
Vishay Semiconductors
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Check for Price | Yes | Yes | Obsolete | 1 V | 1.25 pF | SILICON | MIXER DIODE | SINGLE | YES | 35 V | 1 | PLANAR DOPED BARRIER | VERY HIGH FREQUENCY | Not Qualified | O-LELF-R2 | e2 | DO-213AA | 1 | 150 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Silver (Sn97.5Ag2.5) | WRAP AROUND | END | VISHAY SEMICONDUCTORS | O-LELF-R2 | 2 | unknown | EAR99 | 8541.10.00.60 | DO-213AA | |||||||||||
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BA891T/R
NXP Semiconductors
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Check for Price | Yes | Yes | Obsolete | 100 mA | 1 V | 1.05 pF | 715 mW | SILICON | MIXER DIODE | SINGLE | YES | 35 V | 1 | PLANAR DOPED BARRIER | VERY HIGH FREQUENCY | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | FLAT | DUAL | NXP SEMICONDUCTORS | R-PDSO-F2 | 2 | unknown | EAR99 | 8541.10.00.60 | SC-79 | ||||||||||
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1S2076TA
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 3 pF | 250 mW | SILICON | MIXER DIODE | SINGLE | NO | 1 | PLANAR DOPED BARRIER | HIGH RELIABILITY | Not Qualified | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | RENESAS ELECTRONICS CORP | O-LALF-W2 | 2 | compliant | EAR99 | 8541.10.00.60 | DO-35 | ||||||||||||||||
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DC1802-RING
Dynex Semiconductor
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Check for Price | Obsolete | 350 mV | 0.05 pF | SILICON | 2.5 V | MIXER DIODE | RING, 4 ELEMENTS | YES | 4 | PLANAR DOPED BARRIER | X BAND TO K BAND | 500 mW | 100 W | ZERO BARRIER | Not Qualified | R-CDMW-F4 | 150 °C | -55 °C | 4 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | MICROWAVE | FLAT | DUAL | GEC PLESSEY SEMICONDUCTORS | R-CDMW-F4 | unknown | EAR99 | 8541.10.00.60 | ||||||||||||||||||
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1S2076ATDX
Hitachi Ltd
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Check for Price | Transferred | 3 pF | 250 mW | SILICON | MIXER DIODE | SINGLE | NO | 1 | PLANAR DOPED BARRIER | HIGH RELIABILITY | Not Qualified | O-LALF-W2 | DO-35 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | HITACHI LTD | O-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.60 | DO-35 | |||||||||||||||||||
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BA282-TAP
Vishay Intertechnologies
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Check for Price | Yes | Obsolete | 1 V | 1.25 pF | SILICON | MIXER DIODE | SINGLE | NO | 35 V | 1 | PLANAR DOPED BARRIER | VERY HIGH FREQUENCY | Not Qualified | O-XALF-W2 | e2 | DO-35 | 1 | 150 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn/Ag) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2 | compliant | ||||||||||||||||
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1SS110TDX
Renesas Electronics Corporation
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Check for Price | Transferred | 1.2 pF | 150 mW | SILICON | MIXER DIODE | SINGLE | NO | 1 | PLANAR DOPED BARRIER | HIGH RELIABILITY | Not Qualified | O-LALF-W2 | DO-34 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | RENESAS TECHNOLOGY CORP | O-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.60 | DO-34 | ||||||||||||||||||||
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1S2076RF
Renesas Electronics Corporation
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Check for Price | Obsolete | 3 pF | 250 mW | SILICON | MIXER DIODE | SINGLE | NO | 1 | PLANAR DOPED BARRIER | HIGH RELIABILITY | Not Qualified | O-LALF-W2 | DO-35 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | RENESAS TECHNOLOGY CORP | O-LALF-W2 | 2 | unknown | EAR99 | 8541.10.00.60 | DO-35 |