Parametric results for: Microwave Mixer Diodes

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HSK110
Hitachi Ltd
Check for Price Obsolete 100 mA 1 V 1.2 pF SILICON MIXER DIODE SINGLE YES 35 V 1 PLANAR DOPED BARRIER HIGH RELIABILITY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY Not Qualified O-LELF-R2 60 °C ISOLATED 2 GLASS ROUND LONG FORM WRAP AROUND END HITACHI LTD O-LELF-R2 2 unknown EAR99 8541.10.00.60
DB3X313F0L
ROHM Semiconductor
Check for Price Yes Obsolete 200 mA 550 mV SILICON MIXER DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS YES 30 V 2 PLANAR DOPED BARRIER ULTRA HIGH FREQUENCY 1 A R-PDSO-G3 TO-236AA 1 85 °C -40 °C 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL ROHM CO LTD R-PDSO-G3 compliant EAR99 8541.10.00.60
BA982-GS18
Vishay Semiconductors
Check for Price Yes Yes Obsolete 1 V 1.25 pF SILICON MIXER DIODE SINGLE YES 35 V 1 PLANAR DOPED BARRIER VERY HIGH FREQUENCY Not Qualified O-LELF-R2 e2 DO-213AA 1 150 °C 260 30 ISOLATED 2 GLASS ROUND LONG FORM Tin/Silver (Sn97.5Ag2.5) WRAP AROUND END VISHAY SEMICONDUCTORS O-LELF-R2 2 unknown EAR99 8541.10.00.60 DO-213AA
BA891T/R
NXP Semiconductors
Check for Price Yes Yes Obsolete 100 mA 1 V 1.05 pF 715 mW SILICON MIXER DIODE SINGLE YES 35 V 1 PLANAR DOPED BARRIER VERY HIGH FREQUENCY Not Qualified R-PDSO-F2 e3 1 150 °C -65 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN FLAT DUAL NXP SEMICONDUCTORS R-PDSO-F2 2 unknown EAR99 8541.10.00.60 SC-79
1S2076TA
Renesas Electronics Corporation
Check for Price No No Obsolete 3 pF 250 mW SILICON MIXER DIODE SINGLE NO 1 PLANAR DOPED BARRIER HIGH RELIABILITY Not Qualified O-LALF-W2 e0 DO-35 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL RENESAS ELECTRONICS CORP O-LALF-W2 2 compliant EAR99 8541.10.00.60 DO-35
DC1802-RING
Dynex Semiconductor
Check for Price Obsolete 350 mV 0.05 pF SILICON 2.5 V MIXER DIODE RING, 4 ELEMENTS YES 4 PLANAR DOPED BARRIER X BAND TO K BAND 500 mW 100 W ZERO BARRIER Not Qualified R-CDMW-F4 150 °C -55 °C 4 CERAMIC, METAL-SEALED COFIRED RECTANGULAR MICROWAVE FLAT DUAL GEC PLESSEY SEMICONDUCTORS R-CDMW-F4 unknown EAR99 8541.10.00.60
1S2076ATDX
Hitachi Ltd
Check for Price Transferred 3 pF 250 mW SILICON MIXER DIODE SINGLE NO 1 PLANAR DOPED BARRIER HIGH RELIABILITY Not Qualified O-LALF-W2 DO-35 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL HITACHI LTD O-LALF-W2 2 unknown EAR99 8541.10.00.60 DO-35
BA282-TAP
Vishay Intertechnologies
Check for Price Yes Obsolete 1 V 1.25 pF SILICON MIXER DIODE SINGLE NO 35 V 1 PLANAR DOPED BARRIER VERY HIGH FREQUENCY Not Qualified O-XALF-W2 e2 DO-35 1 150 °C 260 30 ISOLATED 2 UNSPECIFIED ROUND LONG FORM Tin/Silver (Sn/Ag) WIRE AXIAL VISHAY INTERTECHNOLOGY INC HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2 compliant
1SS110TDX
Renesas Electronics Corporation
Check for Price Transferred 1.2 pF 150 mW SILICON MIXER DIODE SINGLE NO 1 PLANAR DOPED BARRIER HIGH RELIABILITY Not Qualified O-LALF-W2 DO-34 ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL RENESAS TECHNOLOGY CORP O-LALF-W2 2 unknown EAR99 8541.10.00.60 DO-34
1S2076RF
Renesas Electronics Corporation
Check for Price Obsolete 3 pF 250 mW SILICON MIXER DIODE SINGLE NO 1 PLANAR DOPED BARRIER HIGH RELIABILITY Not Qualified O-LALF-W2 DO-35 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL RENESAS TECHNOLOGY CORP O-LALF-W2 2 unknown EAR99 8541.10.00.60 DO-35