XK1R9F10QB,LXGQ
Toshiba America Electronic Components
Description: Power Field-Effect Transistor, 160A I(D), 100V, 0.00331ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of XK1R9F10QB,LXGQ by Toshiba America Electronic Components

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for XK1R9F10QB,LXGQ by Toshiba America Electronic Components

Part # Manufacturer Description Stock Price Buy
DISTI # 264-XK1R9F10QBLXGQCT-ND
DigiKey MOSFET N-CH 100V 160A TO220SM Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4344
In Stock
  • 1 $4.7200
  • 10 $3.1300
  • 100 $2.2252
  • 500 $1.8384
  • 1,000 $1.7500
$1.7500 / $4.7200 Buy Now
DISTI # XK1R9F10QB,LXGQ
Avnet Americas Transistor MOSFET N-Channel 100V 160A 3-Pin TO-220SM - Tape and Reel (Alt: XK1R9F10QB,LXGQ) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 52 Weeks, 1 Days Container: Reel 0
RFQ
DISTI # 757-XK1R9F10QB,LXGQ
Mouser Electronics MOSFETs 375W 1MHz Automotive, AEC-Q101 RoHS: Compliant 1941
  • 1 $4.1800
  • 10 $3.1000
  • 25 $3.0100
  • 50 $2.8700
  • 100 $2.2300
  • 250 $2.1700
  • 500 $1.8400
  • 1,000 $1.7500
$1.7500 / $4.1800 Buy Now

CAD Models for XK1R9F10QB,LXGQ by Toshiba America Electronic Components
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Part Data Attributes for XK1R9F10QB,LXGQ by Toshiba America Electronic Components

XK1R9F10QB,LXGQ
Toshiba America Electronic Components
-
-
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
TOSHIBA CORP
Package Description
TO-220SM(W), 3/2 PIN
Reach Compliance Code
unknown
Factory Lead Time
52 Weeks, 1 Day
Samacsys Manufacturer
Toshiba
Avalanche Energy Rating (Eas)
566 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
160 A
Drain-source On Resistance-Max
0.00331 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
730 pF
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
375 W
Pulsed Drain Current-Max (IDM)
480 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. XK1R9F10QB,LXGQ
    Toshiba America Electronic Components
    Power Field-Effect Transistor, 160A I(D), 100V, 0.00331ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

Alternate Parts for XK1R9F10QB,LXGQ

This table gives cross-reference parts and alternative options found for XK1R9F10QB,LXGQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of XK1R9F10QB,LXGQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
CSD19536KCS 100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm 3-TO-220 -55 to 175 Texas Instruments XK1R9F10QB,LXGQ vs CSD19536KCS

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