There are no models available for this part yet.
Overview of XK1R9F10QB,LXGQ by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 cross )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for XK1R9F10QB,LXGQ by Toshiba America Electronic Components
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
264-XK1R9F10QBLXGQCT-ND
|
DigiKey | MOSFET N-CH 100V 160A TO220SM Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4344 In Stock |
|
$1.7500 / $4.7200 | Buy Now | |
DISTI #
XK1R9F10QB,LXGQ
|
Avnet Americas | Transistor MOSFET N-Channel 100V 160A 3-Pin TO-220SM - Tape and Reel (Alt: XK1R9F10QB,LXGQ) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 52 Weeks, 1 Days Container: Reel | 0 |
|
RFQ | ||
DISTI #
757-XK1R9F10QB,LXGQ
|
Mouser Electronics | MOSFETs 375W 1MHz Automotive, AEC-Q101 RoHS: Compliant | 1941 |
|
$1.7500 / $4.1800 | Buy Now |
CAD Models for XK1R9F10QB,LXGQ by Toshiba America Electronic Components
Part Data Attributes for XK1R9F10QB,LXGQ by Toshiba America Electronic Components
|
|
---|---|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
TOSHIBA CORP
|
Package Description
|
TO-220SM(W), 3/2 PIN
|
Reach Compliance Code
|
unknown
|
Factory Lead Time
|
52 Weeks, 1 Day
|
Samacsys Manufacturer
|
Toshiba
|
Avalanche Energy Rating (Eas)
|
566 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
160 A
|
Drain-source On Resistance-Max
|
0.00331 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
730 pF
|
JESD-30 Code
|
R-PSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
175 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
375 W
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Pulsed Drain Current-Max (IDM)
|
480 A
|
Reference Standard
|
AEC-Q101
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for XK1R9F10QB,LXGQ
This table gives cross-reference parts and alternative options found for XK1R9F10QB,LXGQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of XK1R9F10QB,LXGQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD19536KCS | 100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm 3-TO-220 -55 to 175 | Texas Instruments | XK1R9F10QB,LXGQ vs CSD19536KCS |