Parametric results for: XK1R9F10QB,LXGQ under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

566.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

100 V 1

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Drain Current-Max (ID) (1)

160 A 1

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Drain-source On Resistance-Max (1)

3.31 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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730 pF 1

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R-PSSO-G2 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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ENHANCEMENT MODE 1

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175.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Not Recommended 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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375 W 1

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Surface Mount (1)

YES 1

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