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100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm 3-TO-220 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-37289-5-ND
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DigiKey | MOSFET N-CH 100V 150A TO220-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube |
2236 In Stock |
|
$2.0261 / $5.3900 | Buy Now |
DISTI #
595-CSD19536KCS
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Mouser Electronics | MOSFETs 100V N-CH NexFET Pwr MOSFET RoHS: Compliant | 3656 |
|
$2.0200 / $4.5600 | Buy Now |
|
Quest Components | 1 |
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$3.7200 | Buy Now | |
DISTI #
CSD19536KCS
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TME | Transistor: N-MOSFET, unipolar, 100V, 150A, 375W, TO220-3 Min Qty: 1 | 201 |
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$2.8400 / $4.2800 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 150A TO220-3 | 48500 |
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$1.6020 / $2.4030 | Buy Now |
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CSD19536KCS
Texas Instruments
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Datasheet
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CSD19536KCS
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm 3-TO-220 -55 to 175
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 806 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 150 A | |
Drain-source On Resistance-Max | 0.0032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 61 pF | |
JEDEC-95 Code | TO-220 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19536KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19536KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IAUT150N10S5N035ATMA1 | Power Field-Effect Transistor, 150A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN | Infineon Technologies AG | CSD19536KCS vs IAUT150N10S5N035ATMA1 |