Part Details for STP3NC60 by STMicroelectronics
Overview of STP3NC60 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STP3NC60
STP3NC60 CAD Models
STP3NC60 Part Data Attributes:
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STP3NC60
STMicroelectronics
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Datasheet
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STP3NC60
STMicroelectronics
3A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 3.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 80 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STP3NC60
This table gives cross-reference parts and alternative options found for STP3NC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP3NC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STP5NB60FP | 3A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN | STMicroelectronics | STP3NC60 vs STP5NB60FP |
IRFS622 | Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Samsung Semiconductor | STP3NC60 vs IRFS622 |
2SK2146 | TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | STP3NC60 vs 2SK2146 |
IRFS625 | Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Samsung Semiconductor | STP3NC60 vs IRFS625 |
SSS7N55 | Power Field-Effect Transistor, 4A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STP3NC60 vs SSS7N55 |
2SK2230 | TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-8M1B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | STP3NC60 vs 2SK2230 |
IRFI614G | Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | STP3NC60 vs IRFI614G |
IRFI614GPBF | Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULLPACK-3 | International Rectifier | STP3NC60 vs IRFI614GPBF |
2SK1767 | TRANSISTOR 3.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | STP3NC60 vs 2SK1767 |
2SK2162 | TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | STP3NC60 vs 2SK2162 |