Part Details for 2SK2146 by Toshiba America Electronic Components
Overview of 2SK2146 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK2146
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | N-Channel MOSFET Transistor | 1100 |
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RFQ |
Part Details for 2SK2146
2SK2146 CAD Models
2SK2146 Part Data Attributes
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2SK2146
Toshiba America Electronic Components
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Datasheet
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2SK2146
Toshiba America Electronic Components
TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK2146
This table gives cross-reference parts and alternative options found for 2SK2146. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2146, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFD420 | Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 | International Rectifier | 2SK2146 vs IRFD420 |
2SJ313 | TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK2146 vs 2SJ313 |
IRFI614G | Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | 2SK2146 vs IRFI614G |
IRF820AL | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | 2SK2146 vs IRF820AL |
IRFS625 | Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Samsung Semiconductor | 2SK2146 vs IRFS625 |
2SK2750 | TRANSISTOR 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK2146 vs 2SK2750 |
2SK758 | Power Field-Effect Transistor, 5A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Panasonic Electronic Components | 2SK2146 vs 2SK758 |
IRF820ALPBF | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | 2SK2146 vs IRF820ALPBF |
IRFS614A | Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | 2SK2146 vs IRFS614A |
2SK2162 | TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK2146 vs 2SK2162 |