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Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQM100N10-10_GE3
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Avnet Americas | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
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$1.5147 / $1.9242 | Buy Now |
DISTI #
78-SQM100N10-10_GE3
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Mouser Electronics | MOSFET 100V 100A 375W AEC-Q101 Qualified RoHS: Compliant | 4818 |
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$1.4000 / $3.0000 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks Container: Reel | 0Reel |
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$1.4400 / $1.4900 | Buy Now |
DISTI #
SQM100N10-10_GE3
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Avnet Asia | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days | 0 |
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RFQ |
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SQM100N10-10_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQM100N10-10_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SQM100N10-10_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQM100N10-10_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF3610STRRPBF | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | SQM100N10-10_GE3 vs IRF3610STRRPBF |
STB120NF10T4 | N-channel 100 V, 9 mOhm typ., 110 A STripFET II Power MOSFET in D2PAK package | STMicroelectronics | SQM100N10-10_GE3 vs STB120NF10T4 |
SUM110N10-09-E3 | TRANSISTOR 110 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | SQM100N10-10_GE3 vs SUM110N10-09-E3 |
IRF3610STRL | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | SQM100N10-10_GE3 vs IRF3610STRL |
SUM110N10-09-E3 | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | Vishay Intertechnologies | SQM100N10-10_GE3 vs SUM110N10-09-E3 |
IRF3610S | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | SQM100N10-10_GE3 vs IRF3610S |
SUM110N10-09 | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Siliconix | SQM100N10-10_GE3 vs SUM110N10-09 |