Part Details for SUM110N10-09 by Vishay Siliconix
Overview of SUM110N10-09 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for SUM110N10-09
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-263 | 798 |
|
$1.6560 / $4.1400 | Buy Now |
Part Details for SUM110N10-09
SUM110N10-09 CAD Models
SUM110N10-09 Part Data Attributes:
|
|
SUM110N10-09
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SUM110N10-09
Vishay Siliconix
Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | D2PAK | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUM110N10-09
This table gives cross-reference parts and alternative options found for SUM110N10-09. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUM110N10-09, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SUM110N10-09-E3 | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | Vishay Intertechnologies | SUM110N10-09 vs SUM110N10-09-E3 |
| SUM110N10-09-E3 | TRANSISTOR 110 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | SUM110N10-09 vs SUM110N10-09-E3 |
| STB120NF10 | 110A, 100V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | SUM110N10-09 vs STB120NF10 |
| IRF3610STRL | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | SUM110N10-09 vs IRF3610STRL |
| IRF3610STRRPBF | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | SUM110N10-09 vs IRF3610STRRPBF |
| IRF3610STRR | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | SUM110N10-09 vs IRF3610STRR |
| SQM100N10-10_GE3 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN | Vishay Intertechnologies | SUM110N10-09 vs SQM100N10-10_GE3 |
| IRF3610STRLPBF | Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | SUM110N10-09 vs IRF3610STRLPBF |
| STB120NF10T4 | N-channel 100 V, 9 mOhm typ., 110 A STripFET II Power MOSFET in D2PAK package | STMicroelectronics | SUM110N10-09 vs STB120NF10T4 |