Part Details for SPP11N60CFDHKSA1 by Infineon Technologies AG
Overview of SPP11N60CFDHKSA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for SPP11N60CFDHKSA1
SPP11N60CFDHKSA1 CAD Models
SPP11N60CFDHKSA1 Part Data Attributes:
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SPP11N60CFDHKSA1
Infineon Technologies AG
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Datasheet
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SPP11N60CFDHKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.44 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP11N60CFDHKSA1
This table gives cross-reference parts and alternative options found for SPP11N60CFDHKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP11N60CFDHKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP11N60CFDXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP11N60CFDHKSA1 vs SPP11N60CFDXK |
| SPW11N60CFD | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPP11N60CFDHKSA1 vs SPW11N60CFD |
| STB11NM60A-1 | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | SPP11N60CFDHKSA1 vs STB11NM60A-1 |
| STI11NM60ND | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SPP11N60CFDHKSA1 vs STI11NM60ND |
| SIPC14N60C2 | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2 | Infineon Technologies AG | SPP11N60CFDHKSA1 vs SIPC14N60C2 |
| STU11NM60ND | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | SPP11N60CFDHKSA1 vs STU11NM60ND |
| STB11NM60T4 | N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package | STMicroelectronics | SPP11N60CFDHKSA1 vs STB11NM60T4 |
| SPW11N60CFDFKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPP11N60CFDHKSA1 vs SPW11N60CFDFKSA1 |
| STB11NM60ZT4 | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | SPP11N60CFDHKSA1 vs STB11NM60ZT4 |
| SPP11N60CFDXKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP11N60CFDHKSA1 vs SPP11N60CFDXKSA1 |