Part Details for STU11NM60ND by STMicroelectronics
Overview of STU11NM60ND by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STU11NM60ND
STU11NM60ND CAD Models
STU11NM60ND Part Data Attributes
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STU11NM60ND
STMicroelectronics
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Datasheet
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STU11NM60ND
STMicroelectronics
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-251 | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STU11NM60ND
This table gives cross-reference parts and alternative options found for STU11NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU11NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STP11NM60FD | N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package | STMicroelectronics | STU11NM60ND vs STP11NM60FD |
STB11NM60N | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | STU11NM60ND vs STB11NM60N |
STB11NM60T4 | N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package | STMicroelectronics | STU11NM60ND vs STB11NM60T4 |
STP11NM60Z | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | STU11NM60ND vs STP11NM60Z |
SPP11N60CFDHKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STU11NM60ND vs SPP11N60CFDHKSA1 |
STD11NM60ND | N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package | STMicroelectronics | STU11NM60ND vs STD11NM60ND |
SPP11N60CFDXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STU11NM60ND vs SPP11N60CFDXK |
STI11NM60ND | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | STU11NM60ND vs STI11NM60ND |
SPW11N60CFDFKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STU11NM60ND vs SPW11N60CFDFKSA1 |