Datasheets
STU11NM60ND by:

10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3

Part Details for STU11NM60ND by STMicroelectronics

Overview of STU11NM60ND by STMicroelectronics

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Part Details for STU11NM60ND

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STU11NM60ND Part Data Attributes

STU11NM60ND STMicroelectronics
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STU11NM60ND STMicroelectronics 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-251
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STU11NM60ND

This table gives cross-reference parts and alternative options found for STU11NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU11NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STP11NM60FD N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package STMicroelectronics STU11NM60ND vs STP11NM60FD
STB11NM60N 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics STU11NM60ND vs STB11NM60N
STB11NM60T4 N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package STMicroelectronics STU11NM60ND vs STB11NM60T4
STP11NM60Z 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics STU11NM60ND vs STP11NM60Z
SPP11N60CFDHKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STU11NM60ND vs SPP11N60CFDHKSA1
STD11NM60ND N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package STMicroelectronics STU11NM60ND vs STD11NM60ND
SPP11N60CFDXK Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STU11NM60ND vs SPP11N60CFDXK
STI11NM60ND 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics STU11NM60ND vs STI11NM60ND
SPW11N60CFDFKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG STU11NM60ND vs SPW11N60CFDFKSA1

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