Part Details for SPP07N60S5HKSA1 by Infineon Technologies AG
Overview of SPP07N60S5HKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPP07N60S5HKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPP07N60S5HKSA1
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Avnet Americas | SPP07N60 - 600V COOLMOS N-CHANNEL POWER - Rail/Tube (Alt: SPP07N60S5HKSA1) RoHS: Compliant Min Qty: 379 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 400 Partner Stock |
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$0.8181 / $0.9625 | Buy Now |
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Rochester Electronics | SPP07N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 400 |
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$0.8181 / $0.9625 | Buy Now |
Part Details for SPP07N60S5HKSA1
SPP07N60S5HKSA1 CAD Models
SPP07N60S5HKSA1 Part Data Attributes
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SPP07N60S5HKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP07N60S5HKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 14.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SPP07N60S5HKSA1
This table gives cross-reference parts and alternative options found for SPP07N60S5HKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP07N60S5HKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPP07N60C3XK | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP07N60S5HKSA1 vs SPP07N60C3XK |
R6007ENJTL | Power Field-Effect Transistor, 7A I(D), 600V, 0.62ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | SPP07N60S5HKSA1 vs R6007ENJTL |
R6007END3TL1 | Power Field-Effect Transistor, | ROHM Semiconductor | SPP07N60S5HKSA1 vs R6007END3TL1 |
SIHD7N60ET4-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SPP07N60S5HKSA1 vs SIHD7N60ET4-GE3 |
SIHU7N60E-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SPP07N60S5HKSA1 vs SIHU7N60E-GE3 |
SPD07N60S5BTMA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | SPP07N60S5HKSA1 vs SPD07N60S5BTMA1 |
SIHD7N60E-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SPP07N60S5HKSA1 vs SIHD7N60E-GE3 |
SIHD7N60ET5-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SPP07N60S5HKSA1 vs SIHD7N60ET5-GE3 |