There are no models available for this part yet.
Overview of SPP07N60C3XK by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Price & Stock for SPP07N60C3XK by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
SPP07N60C3XKSA1
|
Avnet Americas | Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP07N60C3XKSA1) RoHS: Compliant Min Qty: 550 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$0.6917 / $0.8400 | Buy Now |
CAD Models for SPP07N60C3XK by Infineon Technologies AG
Part Data Attributes for SPP07N60C3XK by Infineon Technologies AG
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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FLANGE MOUNT, R-PSFM-T3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Factory Lead Time
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15 Weeks
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Additional Feature
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AVALANCHE RATED, HIGH RELIABILITY
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Avalanche Energy Rating (Eas)
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230 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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600 V
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Drain Current-Max (ID)
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7.3 A
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Drain-source On Resistance-Max
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0.6 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-220AB
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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21.9 A
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for SPP07N60C3XK
This table gives cross-reference parts and alternative options found for SPP07N60C3XK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP07N60C3XK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| R6007END3TL1 | Power Field-Effect Transistor, | ROHM Semiconductor | SPP07N60C3XK vs R6007END3TL1 |
| SSF7NS60D | Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | SPP07N60C3XK vs SSF7NS60D |
| TSM60NB600CPROG | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Taiwan Semiconductor | SPP07N60C3XK vs TSM60NB600CPROG |
| CDM7-700LRTR13 | Power Field-Effect Transistor, 7A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | Central Semiconductor Corp | SPP07N60C3XK vs CDM7-700LRTR13 |
| TK7P60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SPP07N60C3XK vs TK7P60W |
| SIHU7N60E-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SPP07N60C3XK vs SIHU7N60E-GE3 |
| SIHU7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SPP07N60C3XK vs SIHU7N60E-GE3 |
| SIHD6N65E-GE3 | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | Vishay Intertechnologies | SPP07N60C3XK vs SIHD6N65E-GE3 |
| SPP07N60S5XKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP07N60C3XK vs SPP07N60S5XKSA1 |
| SPP07N60S5HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP07N60C3XK vs SPP07N60S5HKSA1 |