Part Details for SIHU7N60E-GE3 by Vishay Intertechnologies
Overview of SIHU7N60E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHU7N60E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63W4120
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Newark | Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SIHU7N60E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 641 |
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$1.1300 | Buy Now |
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DISTI #
SIHU7N60E-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 7A 3-Pin IPAK - Tape and Reel (Alt: SIHU7N60E-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$1.0700 | Buy Now |
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DISTI #
78-SIHU7N60E-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant | 0 |
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$0.7440 / $0.7920 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks | 0 |
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$0.7770 | Buy Now |
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Bristol Electronics | 2100 |
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RFQ | ||
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Quest Components | 1680 |
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$0.8850 / $2.3600 | Buy Now | |
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DISTI #
SIHU7N60E-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 5A, Idm: 18A, 78W, IPAK,TO251 Min Qty: 1 | 0 |
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$1.1000 / $1.5400 | RFQ |
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DISTI #
SIHU7N60E-GE3
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EBV Elektronik | Trans MOSFET N-CH 600V 7A 3-Pin IPAK (Alt: SIHU7N60E-GE3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHU7N60E-GE3
SIHU7N60E-GE3 CAD Models
SIHU7N60E-GE3 Part Data Attributes
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SIHU7N60E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHU7N60E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 43 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 609 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHU7N60E-GE3
This table gives cross-reference parts and alternative options found for SIHU7N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHU7N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| R6007END3TL1 | Power Field-Effect Transistor, | ROHM Semiconductor | SIHU7N60E-GE3 vs R6007END3TL1 |
| SIHD7N60ET5-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHU7N60E-GE3 vs SIHD7N60ET5-GE3 |
| SIHD7N60ET1-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHU7N60E-GE3 vs SIHD7N60ET1-GE3 |
| TK7Q60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHU7N60E-GE3 vs TK7Q60W |
| SPP07N60S5HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHU7N60E-GE3 vs SPP07N60S5HKSA1 |
| SIHU7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHU7N60E-GE3 vs SIHU7N60E-GE3 |
| SIHD6N65E-GE3 | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | Vishay Intertechnologies | SIHU7N60E-GE3 vs SIHD6N65E-GE3 |
| R6007ENJTL | Power Field-Effect Transistor, 7A I(D), 600V, 0.62ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | SIHU7N60E-GE3 vs R6007ENJTL |
| CDM7-600LRTR13 | Power Field-Effect Transistor, 7A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | Central Semiconductor Corp | SIHU7N60E-GE3 vs CDM7-600LRTR13 |
| SPP07N60C3XK | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHU7N60E-GE3 vs SPP07N60C3XK |