Part Details for SPB80N03S2L-03 by Infineon Technologies AG
Overview of SPB80N03S2L-03 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for SPB80N03S2L-03
SPB80N03S2L-03 CAD Models
SPB80N03S2L-03 Part Data Attributes:
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SPB80N03S2L-03
Infineon Technologies AG
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Datasheet
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SPB80N03S2L-03
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 810 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 220 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB80N03S2L-03
This table gives cross-reference parts and alternative options found for SPB80N03S2L-03. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB80N03S2L-03, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHSNA57Z60SCS | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | SPB80N03S2L-03 vs IRHSNA57Z60SCS |
| IRHSNA54Z60PBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | SPB80N03S2L-03 vs IRHSNA54Z60PBF |
| IRHSNA58Z60PBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | SPB80N03S2L-03 vs IRHSNA58Z60PBF |
| ISL9N302AS3STL99Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | SPB80N03S2L-03 vs ISL9N302AS3STL99Z |
| FDB8030LL86Z | Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | SPB80N03S2L-03 vs FDB8030LL86Z |
| SPB80N03S2L-03E3045A | Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB80N03S2L-03 vs SPB80N03S2L-03E3045A |
| IRHNA53Z60PBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Infineon Technologies AG | SPB80N03S2L-03 vs IRHNA53Z60PBF |
| ISL9N302AS3ST_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | SPB80N03S2L-03 vs ISL9N302AS3ST_NL |
| ISL9N302AP3_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | SPB80N03S2L-03 vs ISL9N302AP3_NL |
| IRHSNA57Z60PBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | SPB80N03S2L-03 vs IRHSNA57Z60PBF |