Part Details for ISL9N302AP3_NL by Fairchild Semiconductor Corporation
Overview of ISL9N302AP3_NL by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for ISL9N302AP3_NL
ISL9N302AP3_NL CAD Models
ISL9N302AP3_NL Part Data Attributes:
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ISL9N302AP3_NL
Fairchild Semiconductor Corporation
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ISL9N302AP3_NL
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for ISL9N302AP3_NL
This table gives cross-reference parts and alternative options found for ISL9N302AP3_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N302AP3_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ISL9N302AS3STL86Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | ISL9N302AP3_NL vs ISL9N302AS3STL86Z |
IRHSNA57Z60 | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | ISL9N302AP3_NL vs IRHSNA57Z60 |
ISL9N302AS3ST_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | ISL9N302AP3_NL vs ISL9N302AS3ST_NL |
STB155N3H6 | N-channel 30 V, 2.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET | STMicroelectronics | ISL9N302AP3_NL vs STB155N3H6 |
IRHSNA57Z60SCS | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | ISL9N302AP3_NL vs IRHSNA57Z60SCS |
IRHNA54Z60PBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Infineon Technologies AG | ISL9N302AP3_NL vs IRHNA54Z60PBF |
IRHNA53Z60 | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Infineon Technologies AG | ISL9N302AP3_NL vs IRHNA53Z60 |
STD155N3H6 | N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET | STMicroelectronics | ISL9N302AP3_NL vs STD155N3H6 |
IRL7833 | Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | ISL9N302AP3_NL vs IRL7833 |
IRHSNA54Z60PBF | Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | Infineon Technologies AG | ISL9N302AP3_NL vs IRHSNA54Z60PBF |