Datasheets
IRHSNA57Z60PBF by:

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN

Part Details for IRHSNA57Z60PBF by Infineon Technologies AG

Overview of IRHSNA57Z60PBF by Infineon Technologies AG

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Part Details for IRHSNA57Z60PBF

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IRHSNA57Z60PBF Part Data Attributes:

IRHSNA57Z60PBF Infineon Technologies AG
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IRHSNA57Z60PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 300 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRHSNA57Z60PBF

This table gives cross-reference parts and alternative options found for IRHSNA57Z60PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHSNA57Z60PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRHSNA57Z60PBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN International Rectifier IRHSNA57Z60PBF vs IRHSNA57Z60PBF
Part Number Description Manufacturer Compare
ISL9N302AS3STL86Z Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation IRHSNA57Z60PBF vs ISL9N302AS3STL86Z
IRHSNA57Z60 Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN Infineon Technologies AG IRHSNA57Z60PBF vs IRHSNA57Z60
ISL9N302AS3ST_NL Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation IRHSNA57Z60PBF vs ISL9N302AS3ST_NL
STB155N3H6 N-channel 30 V, 2.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET STMicroelectronics IRHSNA57Z60PBF vs STB155N3H6
IRHSNA57Z60SCS Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN Infineon Technologies AG IRHSNA57Z60PBF vs IRHSNA57Z60SCS
IRHNA54Z60PBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN Infineon Technologies AG IRHSNA57Z60PBF vs IRHNA54Z60PBF
IRHNA53Z60 Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN Infineon Technologies AG IRHSNA57Z60PBF vs IRHNA53Z60
STD155N3H6 N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET STMicroelectronics IRHSNA57Z60PBF vs STD155N3H6
IRL7833 Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRHSNA57Z60PBF vs IRL7833
IRHSNA54Z60PBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN Infineon Technologies AG IRHSNA57Z60PBF vs IRHSNA54Z60PBF

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