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Transistors / Power Field-Effect Transistors / SPB17N80C3
Datasheets
SPB17N80C3 by:

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

Part Details for SPB17N80C3 by Infineon Technologies AG

Overview of SPB17N80C3 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for SPB17N80C3

Part # Distributor Description Stock Price Buy
DISTI # SPB17N80C3ATMA1
Avnet Americas Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB17N80C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel 13000
  • 1,000 $2.5814
  • 2,000 $2.5032
  • 4,000 $2.4250
  • 6,000 $2.3468
  • 8,000 $2.2685
  • 10,000 $2.1903
  • 100,000 $2.1121
$2.1121 / $2.5814 Buy Now
DISTI # 726-SPB17N80C3
Mouser Electronics MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 RoHS: Compliant 7583
  • 1 $4.5000
  • 10 $3.7800
  • 25 $3.5600
  • 100 $3.0500
  • 250 $2.8800
  • 500 $2.7300
  • 1,000 $2.3200
  • 2,000 $2.1900
$2.1900 / $4.5000 Buy Now
DISTI # 67611306
Verical Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R Min Qty: 17 Package Multiple: 1 Date Code: 2301 Americas - 3000
  • 17 $4.8630
  • 25 $4.6541
  • 50 $4.4767
  • 100 $4.3248
  • 250 $4.1937
  • 500 $4.0796
  • 1,000 $3.9798
  • 2,500 $3.8920
$3.8920 / $4.8630 Buy Now
Quest Components 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 2400
  • 1 $8.2200
  • 198 $4.5210
  • 443 $4.1100
$4.1100 / $8.2200 Buy Now
DISTI # SPB17N80C3
TME Transistor: N-MOSFET, unipolar, 800V, 17A, 227W, PG-TO263-3 Min Qty: 1 478
  • 1 $5.3900
  • 5 $4.7700
  • 25 $4.2800
  • 100 $3.9900
  • 250 $3.7100
$3.7100 / $5.3900 Buy Now
DISTI # TMOSP8687
Rutronik N-CH 800V 17A 290mOhm TO263-3 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel Stock DE - 3000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 1,000 $2.6500
  • 2,000 $2.4900
  • 3,000 $2.3400
  • 4,000 $2.1100
  • 5,000 $2.0400
$2.0400 / $2.6500 Buy Now
Chip1Cloud MOSFET N-CH 800V 17A D2PAK 90414
RFQ
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 3000
  • 1 $4.1630
  • 10 $3.4910
  • 50 $3.0880
  • 100 $2.7500
  • 500 $2.7470
  • 1,000 $2.7400
$2.7400 / $4.1630 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 9720
  • 3 $3.0300
  • 100 $2.6500
  • 500 $2.2700
$2.2700 / $3.0300 Buy Now
Sense Electronic Company Limited TO-263 2620
RFQ
Win Source Electronics MOSFET N-CH 800V 17A D2PAK 133333
  • 17 $3.1090
  • 40 $2.5510
  • 61 $2.4710
  • 84 $2.3920
  • 109 $2.3120
  • 145 $2.0730
$2.0730 / $3.1090 Buy Now

Part Details for SPB17N80C3

SPB17N80C3 CAD Models

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SPB17N80C3 Part Data Attributes

Parametric Data
SPB17N80C3 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPB17N80C3 Infineon Technologies AG Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 670 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.29 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 51 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPB17N80C3

This table gives cross-reference parts and alternative options found for SPB17N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB17N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPP17N80C3XKSA1 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPB17N80C3 vs SPP17N80C3XKSA1
SPW17N80C3FKSA1 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG SPB17N80C3 vs SPW17N80C3FKSA1
APT17N80SC3G Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation SPB17N80C3 vs APT17N80SC3G
SPA17N80C3 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 Infineon Technologies AG SPB17N80C3 vs SPA17N80C3
SPB17N80C2 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-220SMD, D2PAK-3 Infineon Technologies AG SPB17N80C3 vs SPB17N80C2
STB18NM80TRL 17A, 800V, 0.295ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics SPB17N80C3 vs STB18NM80TRL
SPW17N80C2 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Infineon Technologies AG SPB17N80C3 vs SPW17N80C2
SPP17N80C2 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPB17N80C3 vs SPP17N80C2
SPW17N80C3CKSA1 Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG SPB17N80C3 vs SPW17N80C3CKSA1

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