Part Details for SKM200GB128D by SEMIKRON
Overview of SKM200GB128D by SEMIKRON
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SKM200GB128D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SKM200GB128D
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for SKM200GB128D
SKM200GB128D CAD Models
SKM200GB128D Part Data Attributes
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SKM200GB128D
SEMIKRON
Buy Now
Datasheet
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Compare Parts:
SKM200GB128D
SEMIKRON
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Part Package Code | DO-204 | |
| Package Description | FLANGE MOUNT, R-XUFM-X5 | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE D56 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Semikron | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X5 | |
| JESD-609 Code | e3/e4 | |
| Number of Elements | 2 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN/SILVER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 675 ns | |
| Turn-on Time-Nom (ton) | 175 ns | |
| VCEsat-Max | 2.35 V |
Alternate Parts for SKM200GB128D
This table gives cross-reference parts and alternative options found for SKM200GB128D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKM200GB128D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTGT200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | SKM200GB128D vs APTGT200A120D3G |
| FF200R12KS4 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs FF200R12KS4 |
| BSM150GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs BSM150GB120DLCHOSA1 |
| FF200R12KT3EHOSA1 | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs FF200R12KT3EHOSA1 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | SKM200GB128D vs CM300DU-24H |
| FF200R12KT3 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs FF200R12KT3 |
| BSM100GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs BSM100GB120DLCHOSA1 |
| FF200R12KS4HOSA1 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs FF200R12KS4HOSA1 |
| FF200R12KE4HOSA1 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | SKM200GB128D vs FF200R12KE4HOSA1 |
| MII300-12A4 | Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | SKM200GB128D vs MII300-12A4 |