Part Details for BSM150GB120DLCHOSA1 by Infineon Technologies AG
Overview of BSM150GB120DLCHOSA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM150GB120DLCHOSA1
BSM150GB120DLCHOSA1 CAD Models
BSM150GB120DLCHOSA1 Part Data Attributes
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BSM150GB120DLCHOSA1
Infineon Technologies AG
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Datasheet
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BSM150GB120DLCHOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 52 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 650 ns | |
| Turn-on Time-Nom (ton) | 190 ns |
Alternate Parts for BSM150GB120DLCHOSA1
This table gives cross-reference parts and alternative options found for BSM150GB120DLCHOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM150GB120DLCHOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTGT200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | BSM150GB120DLCHOSA1 vs APTGT200A120D3G |
| FF200R12KS4 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GB120DLCHOSA1 vs FF200R12KS4 |
| FF200R12KT3EHOSA1 | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GB120DLCHOSA1 vs FF200R12KT3EHOSA1 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | BSM150GB120DLCHOSA1 vs CM300DU-24H |
| FF200R12KT3 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GB120DLCHOSA1 vs FF200R12KT3 |
| BSM100GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GB120DLCHOSA1 vs BSM100GB120DLCHOSA1 |
| FF200R12KS4HOSA1 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GB120DLCHOSA1 vs FF200R12KS4HOSA1 |
| FF200R12KE4HOSA1 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GB120DLCHOSA1 vs FF200R12KE4HOSA1 |
| MII300-12A4 | Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | BSM150GB120DLCHOSA1 vs MII300-12A4 |
| APTGT200A120 | Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | BSM150GB120DLCHOSA1 vs APTGT200A120 |