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Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FF200R12KT3EHOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 3 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT |
391 In Stock |
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$144.2300 | Buy Now |
DISTI #
FF200R12KT3EHOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 3 Lead time: 16 Weeks Container: Tray | Limited Supply - Call |
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$138.1620 | Buy Now |
DISTI #
FF200R12KT3EHOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A 20V Screw Mount Tray - Trays (Alt: FF200R12KT3EHOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$139.7900 / $169.7450 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks Container: Tray | 0Tray |
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$133.1400 | Buy Now |
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Rochester Electronics | FF200R12 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 391 |
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$123.7700 / $145.6100 | Buy Now |
DISTI #
FF200R12KT3E
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TME | Module: IGBT, transistor/transistor,common emitter, IGBT x2 Min Qty: 1 | 0 |
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$112.7300 / $140.9100 | RFQ |
DISTI #
SP000314729
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 295A 20V Screw Mount Tray (Alt: SP000314729) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FF200R12KT3EHOSA1
Infineon Technologies AG
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Datasheet
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FF200R12KT3EHOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 580 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 680 ns | |
Turn-on Time-Nom (ton) | 215 ns |
This table gives cross-reference parts and alternative options found for FF200R12KT3EHOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R12KT3EHOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FF200R12KT3_E | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KT3EHOSA1 vs FF200R12KT3_E |