Datasheets
SI3433CDV-T1-E3 by:

TRANSISTOR 5200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

Part Details for SI3433CDV-T1-E3 by Vishay Siliconix

Overview of SI3433CDV-T1-E3 by Vishay Siliconix

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Price & Stock for SI3433CDV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI3433CDV-T1-E3CT-ND
DigiKey MOSFET P-CH 20V 6A 6TSOP Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2300
In Stock
  • 1 $0.4900
  • 10 $0.4160
  • 100 $0.2889
  • 500 $0.2255
  • 1,000 $0.1833
  • 3,000 $0.1639
  • 6,000 $0.1555
  • 9,000 $0.1444
  • 30,000 $0.1411
$0.1411 / $0.4900 Buy Now

Part Details for SI3433CDV-T1-E3

SI3433CDV-T1-E3 CAD Models

SI3433CDV-T1-E3 Part Data Attributes

SI3433CDV-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI3433CDV-T1-E3 Vishay Siliconix TRANSISTOR 5200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 180 pF
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI3433CDV-T1-E3

This table gives cross-reference parts and alternative options found for SI3433CDV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3433CDV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI3433CDV-T1-GE3 Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3433CDV-T1-E3 vs SI3433CDV-T1-GE3
SI3433CDV-T1-GE3 TRANSISTOR 5200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal Vishay Siliconix SI3433CDV-T1-E3 vs SI3433CDV-T1-GE3
Part Number Description Manufacturer Compare
SI4330DY-T1-E3 Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 Vishay Intertechnologies SI3433CDV-T1-E3 vs SI4330DY-T1-E3
2N5517 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI3433CDV-T1-E3 vs 2N5517
2N5518 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI3433CDV-T1-E3 vs 2N5518
2N5516 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI3433CDV-T1-E3 vs 2N5516
2N5906 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, Solitron Devices Inc SI3433CDV-T1-E3 vs 2N5906
SDF506 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI3433CDV-T1-E3 vs SDF506
2N5519 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI3433CDV-T1-E3 vs 2N5519
MMSF3300 6700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC SI3433CDV-T1-E3 vs MMSF3300
FDW2503NZ Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Fairchild Semiconductor Corporation SI3433CDV-T1-E3 vs FDW2503NZ
NTGS5120PT1G Single P-Channel Power MOSFET -60V -2.9A 111mΩ, TSOP-6, 3000-REEL onsemi SI3433CDV-T1-E3 vs NTGS5120PT1G

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