There are no models available for this part yet.
Overview of MMSF3300 by Motorola Mobility LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CAD Models for MMSF3300 by Motorola Mobility LLC
Part Data Attributes for MMSF3300 by Motorola Mobility LLC
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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MOTOROLA INC
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Package Description
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SMALL OUTLINE, R-PDSO-G8
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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6.7 A
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Drain-source On Resistance-Max
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0.0125 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PDSO-G8
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Number of Elements
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1
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for MMSF3300
This table gives cross-reference parts and alternative options found for MMSF3300. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMSF3300, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4330DY-T1-E3 | Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Vishay Intertechnologies | MMSF3300 vs SI4330DY-T1-E3 |
| 2N5517 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | MMSF3300 vs 2N5517 |
| 2N5518 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | MMSF3300 vs 2N5518 |
| 2N5516 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | MMSF3300 vs 2N5516 |
| 2N5906 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, | Solitron Devices Inc | MMSF3300 vs 2N5906 |
| SDF506 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | MMSF3300 vs SDF506 |
| 2N5519 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | MMSF3300 vs 2N5519 |
| FDW2503NZ | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | Fairchild Semiconductor Corporation | MMSF3300 vs FDW2503NZ |
| NTGS5120PT1G | Single P-Channel Power MOSFET -60V -2.9A 111mΩ, TSOP-6, 3000-REEL | onsemi | MMSF3300 vs NTGS5120PT1G |
| FDS6930B | Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ, 2500-REEL | onsemi | MMSF3300 vs FDS6930B |