Part Details for SI2305DS-T1-E3 by Vishay Siliconix
Overview of SI2305DS-T1-E3 by Vishay Siliconix
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2305DS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236 | 245 |
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$0.2331 / $0.4995 | Buy Now |
Part Details for SI2305DS-T1-E3
SI2305DS-T1-E3 CAD Models
SI2305DS-T1-E3 Part Data Attributes
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SI2305DS-T1-E3
Vishay Siliconix
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Datasheet
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SI2305DS-T1-E3
Vishay Siliconix
TRANSISTOR 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2305DS-T1-E3
This table gives cross-reference parts and alternative options found for SI2305DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2305DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI2305DS-T1 | Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | SI2305DS-T1-E3 vs SI2305DS-T1 |
| SI2305DS-T1-GE3 | TRANSISTOR 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SI2305DS-T1-E3 vs SI2305DS-T1-GE3 |
| SI2305DS-T1-E3 | Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Intertechnologies | SI2305DS-T1-E3 vs SI2305DS-T1-E3 |