Part Details for SI2305DS-T1-E3 by Vishay Intertechnologies
Overview of SI2305DS-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2305DS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3145 |
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RFQ | ||
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Quest Components | 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236 | 58 |
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$0.6000 / $1.0000 | Buy Now |
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Quest Components | 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236 | 1032 |
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$0.6500 / $2.5000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 199 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1884 |
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RFQ | |
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Chip1Cloud | Trans MOSFET P-CH 8V 3.5A 3-Pin SOT-23 T/R / MOSFET P-CH 8V 3.5A SOT23-3 | 90378 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 2367 |
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$0.8300 / $1.2700 | Buy Now |
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DISTI #
1470101RL
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element14 Asia-Pacific | MOSFET, P, TO-236 RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.4679 / $0.6916 | Buy Now |
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DISTI #
1470101
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element14 Asia-Pacific | MOSFET, P, TO-236 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.4679 / $0.9964 | Buy Now |
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DISTI #
1470101
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Farnell | MOSFET, P, TO-236 RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.2769 / $0.5239 | Buy Now |
Part Details for SI2305DS-T1-E3
SI2305DS-T1-E3 CAD Models
SI2305DS-T1-E3 Part Data Attributes:
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SI2305DS-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2305DS-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2305DS-T1-E3
This table gives cross-reference parts and alternative options found for SI2305DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2305DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI2305DS-T1-E3 | TRANSISTOR 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SI2305DS-T1-E3 vs SI2305DS-T1-E3 |
| SI2305DS-T1-GE3 | TRANSISTOR 3.5 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SI2305DS-T1-E3 vs SI2305DS-T1-GE3 |
| SI2305DS-T1 | Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | SI2305DS-T1-E3 vs SI2305DS-T1 |
| SI2305DS-T1-GE3 | Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Intertechnologies | SI2305DS-T1-E3 vs SI2305DS-T1-GE3 |
| SI2305DS | Transistor | Vishay Siliconix | SI2305DS-T1-E3 vs SI2305DS |