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Power Field-Effect Transistor, 55A I(D), 100V, 0.0189ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RSJ550N10TLCT-ND
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DigiKey | MOSFET N-CH 100V 55A LPTS Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
896 In Stock |
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$1.9412 / $4.1600 | Buy Now |
DISTI #
RSJ550N10TL
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Avnet Americas | Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) LPTS T/R - Tape and Reel (Alt: RSJ550N10TL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$1.4950 / $1.7020 | Buy Now |
DISTI #
755-RSJ550N10TL
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Mouser Electronics | MOSFET 4V Drive Nch MOSFET RoHS: Compliant | 1745 |
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$1.9400 / $4.1600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.5400 | Buy Now |
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Quest Components | 565 |
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$2.0444 / $3.7170 | Buy Now | |
DISTI #
RSJ550N10TL
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Avnet Americas | Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) LPTS T/R - Tape and Reel (Alt: RSJ550N10TL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$1.4950 / $1.7020 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 100V 55A LPTS Min Qty: 1 | 10-Authorized Distributor |
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$1.8424 / $3.8514 | Buy Now |
DISTI #
RSJ550N10TL
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Avnet Silica | Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) LPTS T/R (Alt: RSJ550N10TL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 3 Weeks, 2 Days | Silica - 0 |
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Buy Now | |
DISTI #
2706670
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Farnell | MOSFET, N-CH, 100V, 55A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.8397 | Buy Now |
DISTI #
2706670RL
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Farnell | MOSFET, N-CH, 100V, 55A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Reel | 0 |
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$0.8397 | Buy Now |
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RSJ550N10TL
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RSJ550N10TL
ROHM Semiconductor
Power Field-Effect Transistor, 55A I(D), 100V, 0.0189ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | LPTS, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.0189 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RSJ550N10TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RSJ550N10TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF540-009 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | RSJ550N10TL vs IRF540-009 |
IRF540PBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | RSJ550N10TL vs IRF540PBF |
MTP25N06 | 25A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RSJ550N10TL vs MTP25N06 |
NTB6412ANT4G | Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL | onsemi | RSJ550N10TL vs NTB6412ANT4G |
IRF541-001 | Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RSJ550N10TL vs IRF541-001 |
IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | RSJ550N10TL vs IRF540 |
MTB33N10ET4 | 33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 | onsemi | RSJ550N10TL vs MTB33N10ET4 |
2SK1928 | TRANSISTOR 27 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | RSJ550N10TL vs 2SK1928 |
IRF543 | Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RSJ550N10TL vs IRF543 |
IRF540 | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RSJ550N10TL vs IRF540 |