Part Details for NTB6412ANT4G by onsemi
Overview of NTB6412ANT4G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTB6412ANT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AK0740
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Newark | Ntb6412Ant4G, Single Mosfets |Onsemi NTB6412ANT4G Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.3400 / $1.3800 | Buy Now |
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Rochester Electronics | NTB6412AN - 58A, 100V, 0.0182ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2519 |
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$1.2700 / $1.4900 | Buy Now |
Part Details for NTB6412ANT4G
NTB6412ANT4G CAD Models
NTB6412ANT4G Part Data Attributes:
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NTB6412ANT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTB6412ANT4G
onsemi
Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK 2 LEAD | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.0182 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for NTB6412ANT4G
This table gives cross-reference parts and alternative options found for NTB6412ANT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB6412ANT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF541 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | NTB6412ANT4G vs IRF541 |
| MTB40N10ET4 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | NTB6412ANT4G vs MTB40N10ET4 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | NTB6412ANT4G vs IRF540 |
| BUK455-100A | TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | NTB6412ANT4G vs BUK455-100A |
| IRF541 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | NTB6412ANT4G vs IRF541 |
| IRF543 | 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | NTB6412ANT4G vs IRF543 |
| IRF543 | Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | NTB6412ANT4G vs IRF543 |
| IRF542 | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | NTB6412ANT4G vs IRF542 |
| IRF541 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | NTB6412ANT4G vs IRF541 |
| NTB6411ANG | 72A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | Rochester Electronics LLC | NTB6412ANT4G vs NTB6411ANG |