Part Details for RRH075P03TB by ROHM Semiconductor
Overview of RRH075P03TB by ROHM Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RRH075P03TB
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
C1S625901157170
|
Chip1Stop | MOSFET pbFree: No | 450 |
|
$1.8200 / $1.9900 | Buy Now |
Part Details for RRH075P03TB
RRH075P03TB CAD Models
RRH075P03TB Part Data Attributes
|
RRH075P03TB
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RRH075P03TB
ROHM Semiconductor
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ESD PROTECTED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.5 A | |
Drain-source On Resistance-Max | 0.021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RRH075P03TB
This table gives cross-reference parts and alternative options found for RRH075P03TB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RRH075P03TB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7101 | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | RRH075P03TB vs IRF7101 |
MMDF3N03HDR2 | 4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8 | onsemi | RRH075P03TB vs MMDF3N03HDR2 |
FDS8934A | Dual P-Channel Enhancement Mode Field Effect Transistor, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL | Fairchild Semiconductor Corporation | RRH075P03TB vs FDS8934A |
NDS9956AL99Z | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | RRH075P03TB vs NDS9956AL99Z |
HAT1026R | 7A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | RRH075P03TB vs HAT1026R |
HAT2027R | 7A, 20V, 0.053ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | RRH075P03TB vs HAT2027R |
NDS9956A_NL | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8 | Fairchild Semiconductor Corporation | RRH075P03TB vs NDS9956A_NL |
IRF7401 | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | RRH075P03TB vs IRF7401 |
F4H3PD | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.21ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | RRH075P03TB vs F4H3PD |
HUF76105DK8T | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Fairchild Semiconductor Corporation | RRH075P03TB vs HUF76105DK8T |