Datasheets
MMDF3N03HDR2 by:

4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8

Part Details for MMDF3N03HDR2 by onsemi

Overview of MMDF3N03HDR2 by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for MMDF3N03HDR2

Part # Distributor Description Stock Price Buy
Bristol Electronics   794
RFQ
Bristol Electronics   Min Qty: 4 970
  • 4 $1.3125
  • 17 $0.8531
  • 60 $0.4922
  • 205 $0.4200
  • 442 $0.3675
$0.3675 / $1.3125 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1440
  • 1 $1.3500
  • 318 $0.5625
  • 1,423 $0.4950
$0.4950 / $1.3500 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 776
  • 1 $1.7500
  • 70 $0.5250
  • 382 $0.4550
$0.4550 / $1.7500 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 40
  • 1 $2.2500
  • 3 $1.8000
  • 12 $1.3500
$1.3500 / $2.2500 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 635
  • 1 $4.0000
  • 325 $1.6500
  • 607 $1.5000
$1.5000 / $4.0000 Buy Now

Part Details for MMDF3N03HDR2

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MMDF3N03HDR2 Part Data Attributes

MMDF3N03HDR2 onsemi
Buy Now Datasheet
Compare Parts:
MMDF3N03HDR2 onsemi 4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT
Package Description MINIATURE, CASE 751-07, SOP-8
Pin Count 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 324 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF3N03HDR2

This table gives cross-reference parts and alternative options found for MMDF3N03HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF3N03HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF3N03HDR2 2.8A, 30V, 0.09ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC MMDF3N03HDR2 vs MMDF3N03HDR2
Part Number Description Manufacturer Compare
BSO303SPHXUMA1 Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG MMDF3N03HDR2 vs BSO303SPHXUMA1
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation MMDF3N03HDR2 vs HP4936DYT
HAT1126R 6A, 60V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation MMDF3N03HDR2 vs HAT1126R
HP4936DY 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation MMDF3N03HDR2 vs HP4936DY
FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation MMDF3N03HDR2 vs FDS8934A
NDS9947X 3.5A, 20V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments MMDF3N03HDR2 vs NDS9947X
IRF4435 Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 International Rectifier MMDF3N03HDR2 vs IRF4435
IRF7403 Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier MMDF3N03HDR2 vs IRF7403
FDS4953_NL Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF3N03HDR2 vs FDS4953_NL
RF1K4908696 Power Field-Effect Transistor, 3.5A I(D), 30V, 0.132ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation MMDF3N03HDR2 vs RF1K4908696

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