Part Details for MMDF3N03HDR2 by onsemi
Overview of MMDF3N03HDR2 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for MMDF3N03HDR2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 970 |
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$0.3675 / $1.3125 | Buy Now |
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Bristol Electronics | 794 |
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RFQ | ||
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1440 |
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$0.4950 / $1.3500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 776 |
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$0.4550 / $1.7500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 635 |
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$1.5000 / $4.0000 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 40 |
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$1.3500 / $2.2500 | Buy Now |
Part Details for MMDF3N03HDR2
MMDF3N03HDR2 CAD Models
MMDF3N03HDR2 Part Data Attributes
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MMDF3N03HDR2
onsemi
Buy Now
Datasheet
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Compare Parts:
MMDF3N03HDR2
onsemi
4.1A, 30V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOP-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | SOT | |
| Package Description | MINIATURE, CASE 751-07, SOP-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 324 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MMDF3N03HDR2
This table gives cross-reference parts and alternative options found for MMDF3N03HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF3N03HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7403PBF | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | MMDF3N03HDR2 vs IRF7403PBF |
| FDS9936A | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | MMDF3N03HDR2 vs FDS9936A |
| HUF76105DK8T136 | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Fairchild Semiconductor Corporation | MMDF3N03HDR2 vs HUF76105DK8T136 |
| PHN210T | Power Field-Effect Transistor | Nexperia | MMDF3N03HDR2 vs PHN210T |
| IRF7403 | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | MMDF3N03HDR2 vs IRF7403 |
| F3H3ND | Power Field-Effect Transistor, 3A I(D), 30V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | MMDF3N03HDR2 vs F3H3ND |
| 934055451118 | Power Field-Effect Transistor | Nexperia | MMDF3N03HDR2 vs 934055451118 |
| IRF7205 | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | MMDF3N03HDR2 vs IRF7205 |
| BSO303SPH | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | MMDF3N03HDR2 vs BSO303SPH |
| PHN210 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | MMDF3N03HDR2 vs PHN210 |