There are no models available for this part yet.
Overview of HAT2027R by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
HAT2027R-EL-E | Renesas Electronics Corporation | Nch Dual Power Mosfet 20V 7A 38Mohm Sop8 |
CAD Models for HAT2027R by Renesas Electronics Corporation
Part Data Attributes for HAT2027R by Renesas Electronics Corporation
|
|
---|---|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
Part Package Code
|
SOIC
|
Package Description
|
FP-8DA, SOP-8
|
Pin Count
|
8
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Date Of Intro
|
1996-12-01
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
7 A
|
Drain-source On Resistance-Max
|
0.053 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
MS-012AA
|
JESD-30 Code
|
R-PDSO-G8
|
Number of Elements
|
2
|
Number of Terminals
|
8
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
2 W
|
Pulsed Drain Current-Max (IDM)
|
56 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for HAT2027R
This table gives cross-reference parts and alternative options found for HAT2027R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT2027R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSO303SPHXUMA1 | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | HAT2027R vs BSO303SPHXUMA1 |
PHN210T | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power | NXP Semiconductors | HAT2027R vs PHN210T |
FY3ABJ-03 | 3A, 30V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8 | Renesas Electronics Corporation | HAT2027R vs FY3ABJ-03 |
F5H3N | Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | HAT2027R vs F5H3N |
BSO303SPH | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | HAT2027R vs BSO303SPH |
PHN210 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | HAT2027R vs PHN210 |
F4H3ND | Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | HAT2027R vs F4H3ND |
BSO305N | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Infineon Technologies AG | HAT2027R vs BSO305N |
FDS9953AD84Z | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | HAT2027R vs FDS9953AD84Z |
HUF76113DK8T | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 | Fairchild Semiconductor Corporation | HAT2027R vs HUF76113DK8T |