There are no models available for this part yet.
Overview of RFD14N06L by Intersil Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Energy and Power Systems
CAD Models for RFD14N06L by Intersil Corporation
Part Data Attributes for RFD14N06L by Intersil Corporation
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INTERSIL CORP
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
14 A
|
Drain-source On Resistance-Max
|
0.1 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-251AA
|
JESD-30 Code
|
R-PSIP-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
48 W
|
Power Dissipation-Max (Abs)
|
40 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
100 ns
|
Turn-on Time-Max (ton)
|
60 ns
|
Alternate Parts for RFD14N06L
This table gives cross-reference parts and alternative options found for RFD14N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RFD14N05L | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, 3 PIN | Fairchild Semiconductor Corporation | RFD14N06L vs RFD14N05L |
MTP15N05L | 15A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFD14N06L vs MTP15N05L |
RFD14N05_NL | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN | Rochester Electronics LLC | RFD14N06L vs RFD14N05_NL |
RFD14N05 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | RFD14N06L vs RFD14N05 |
MTP15N05L | 15A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | RFD14N06L vs MTP15N05L |
RFD14N05 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN | Rochester Electronics LLC | RFD14N06L vs RFD14N05 |
RFD14N06L | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD14N06L vs RFD14N06L |
BUK553-60B | TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | RFD14N06L vs BUK553-60B |
RFD14N05L | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFD14N06L vs RFD14N05L |
BUK553-60A | TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | RFD14N06L vs BUK553-60A |