RFD14N06L
Description: 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Overview of RFD14N06L by Intersil Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Aerospace and Defense Energy and Power Systems

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Part Data Attributes for RFD14N06L by Intersil Corporation

RFD14N06L
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERSIL CORP
Package Description
IN-LINE, R-PSIP-T3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
48 W
Power Dissipation-Max (Abs)
40 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
60 ns
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  1. RFD14N06L
    Intersil Corporation
    14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
    VS

Alternate Parts for RFD14N06L

This table gives cross-reference parts and alternative options found for RFD14N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFD14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, 3 PIN Fairchild Semiconductor Corporation RFD14N06L vs RFD14N05L
MTP15N05L 15A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFD14N06L vs MTP15N05L
RFD14N05_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC RFD14N06L vs RFD14N05_NL
RFD14N05 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD14N06L vs RFD14N05
MTP15N05L 15A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics RFD14N06L vs MTP15N05L
RFD14N05 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC RFD14N06L vs RFD14N05
RFD14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD14N06L vs RFD14N06L
BUK553-60B TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors RFD14N06L vs BUK553-60B
RFD14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor RFD14N06L vs RFD14N05L
BUK553-60A TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors RFD14N06L vs BUK553-60A
Part Number Description Manufacturer Compare
IRF9Z34NSTRL Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RFD14N06L vs IRF9Z34NSTRL
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD14N06L vs HUF75321D3S
2SJ602-ZJ-AZ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation RFD14N06L vs 2SJ602-ZJ-AZ
NTD18N06L 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi RFD14N06L vs NTD18N06L
934056248118 Power Field-Effect Transistor, 18A I(D), 55V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 Nexperia RFD14N06L vs 934056248118
MTP15N05L 15A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFD14N06L vs MTP15N05L
2SJ492-ZJ 20A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN Renesas Electronics Corporation RFD14N06L vs 2SJ492-ZJ
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG RFD14N06L vs IRFR024NTRPBF
FQB20N06L Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation RFD14N06L vs FQB20N06L
HUFA76409D3 Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation RFD14N06L vs HUFA76409D3

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