Datasheets
PTB20134 by:

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN

Part Details for PTB20134 by Ericsson

Overview of PTB20134 by Ericsson

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Applications Consumer Electronics Automotive

Part Details for PTB20134

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PTB20134 Part Data Attributes:

PTB20134 Ericsson
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PTB20134 Ericsson RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer ERICSSON POWER MODULES AB
Package Description FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection EMITTER
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 25 V
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Terminals 6
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PTB20134

This table gives cross-reference parts and alternative options found for PTB20134. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PTB20134, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PTB20134 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN Infineon Technologies AG PTB20134 vs PTB20134
Part Number Description Manufacturer Compare
BLW80 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc PTB20134 vs BLW80
SD4017 UHF BAND, Si, NPN, RF POWER TRANSISTOR, M142, 6 PIN STMicroelectronics PTB20134 vs SD4017
2SC2782 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, 2-13C1A, 6 PIN, BIP RF Power Toshiba America Electronic Components PTB20134 vs 2SC2782
MRF240A RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc PTB20134 vs MRF240A
SD1143 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN Microsemi Corporation PTB20134 vs SD1143
SD1272 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M135, 4 PIN Advanced Power Technology PTB20134 vs SD1272
2SC2782 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc PTB20134 vs 2SC2782
SD1075 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Advanced Power Technology PTB20134 vs SD1075
2N3632 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Microsemi Corporation PTB20134 vs 2N3632
ULBM10 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, STUD PACKAGE-4 Advanced Semiconductor Inc PTB20134 vs ULBM10

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