PTB20134
vs
BLW80
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
ERICSSON POWER MODULES AB
|
ASI SEMICONDUCTOR INC
|
| Package Description |
FLANGE MOUNT, R-CDFM-F6
|
POST/STUD MOUNT, O-CRPM-F4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
EMITTER
|
|
| Collector Current-Max (IC) |
8 A
|
1 A
|
| Collector-Emitter Voltage-Max |
25 V
|
17 V
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-CDFM-F6
|
O-CRPM-F4
|
| Number of Terminals |
6
|
4
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
POST/STUD MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
RADIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
10
|
| Number of Elements |
|
1
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
17 W
|
|
|
|
Compare PTB20134 with alternatives
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